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Journal Article Enhancement of Light Extraction from a Silicon Quantum Dot Light-Emitting Diode Containing a Rugged Surface Pattern
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Authors
Kyung Hyun Kim, Jae Heon Shin, Nae Man Park, Chul Huh, Tae Youb Kim, Kwan Sik Cho, Jong Cheol Hong, Gun Yong Sung
Issue Date
2006-11
Citation
Applied Physics Letters, v.89, no.19, pp.1-3
ISSN
0003-6951
Publisher
American Institute of Physics (AIP)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1063/1.2387862
Abstract
The enhancement in light extraction efficiency from a periodic micron-scale rugged surface pattern on Si quantum dot light-emitting-diode (Si-QD LED) structures was investigated, both numerically and experimentally. Micron-scale rugged surface patterns were fabricated on the top layer of the Si-QD LED to increase the extraction of light from the active layer. The optimum light extraction condition for a Si-QD LED corresponded to a pattern size/period ratio of ~0.7. In experiments, the luminescent powers of a Si-QD LED with/without micron-scale surface patterns increase linearly with current density, and the efficiency of light extraction was enhanced by a factor of 2.8. © 2006 American Institute of Physics.