상세정보
학술지
Enhancement of Light Extraction from a Silicon Quantum Dot Light-Emitting Diode Containing a Rugged Surface Pattern
- 발행일
- 200611
- 출처
- Applied Physics Letters, v.89 no.19, pp.1-3
- ISSN
- 0003-6951
- 출판사
- American Institute of Physics (AIP)
- 협약과제
- 06MB3200, 유비쿼터스 건강관리용 모듈 시스템, 박선희
- 초록
- The enhancement in light extraction efficiency from a periodic micron-scale rugged surface pattern on Si quantum dot light-emitting-diode (Si-QD LED) structures was investigated, both numerically and experimentally. Micron-scale rugged surface patterns were fabricated on the top layer of the Si-QD LED to increase the extraction of light from the active layer. The optimum light extraction condition for a Si-QD LED corresponded to a pattern size/period ratio of ~0.7. In experiments, the luminescent powers of a Si-QD LED with/without micron-scale surface patterns increase linearly with current density, and the efficiency of light extraction was enhanced by a factor of 2.8. © 2006 American Institute of Physics.
- KSP 제안 키워드
- Active Layer, Pattern size, Period ratio, Quantum Dot(QD), Si quantum dot, Silicon quantum dots, Surface pattern, Top layer, current density, light extraction efficiency, light-emitting diode(LED)