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Journal Article Enhancement of Light Extraction from a Silicon Quantum Dot Light-Emitting Diode Containing a Rugged Surface Pattern
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Authors
Kyung Hyun Kim, Jae Heon Shin, Nae Man Park, Chul Huh, Tae Youb Kim, Kwan Sik Cho, Jong Cheol Hong, Gun Yong Sung
Issue Date
2006-11
Citation
Applied Physics Letters, v.89, no.19, pp.1-3
ISSN
0003-6951
Publisher
American Institute of Physics (AIP)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1063/1.2387862
Abstract
The enhancement in light extraction efficiency from a periodic micron-scale rugged surface pattern on Si quantum dot light-emitting-diode (Si-QD LED) structures was investigated, both numerically and experimentally. Micron-scale rugged surface patterns were fabricated on the top layer of the Si-QD LED to increase the extraction of light from the active layer. The optimum light extraction condition for a Si-QD LED corresponded to a pattern size/period ratio of ~0.7. In experiments, the luminescent powers of a Si-QD LED with/without micron-scale surface patterns increase linearly with current density, and the efficiency of light extraction was enhanced by a factor of 2.8. © 2006 American Institute of Physics.
KSP Keywords
Active Layer, Pattern size, Period ratio, Quantum Dot(QD), Si quantum dot, Silicon quantum dots, Surface pattern, Top layer, current density, light extraction efficiency, light-emitting diode(LED)