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Journal Article
Fabrication of Reliable Self-Aligned InP/InGaAs/InP Double Heterojunction Bipolar Transistor with Hexagonal Emitter Mesa Structure
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- Authors
- Byoung Gue Min, Jong Min Lee, Seong Il Kim, Chul Won Ju, Kyung Ho Lee
- Issue Date
- 2006-12
- Citation
- Journal of the Korean Physical Society, v.49, no.3, pp.S780-S783
- ISSN
- 0374-4884
- Publisher
- 한국물리학회 (KPS)
- Language
- English
- Type
- Journal Article
- Abstract
- Disclosed is a simple and reliable method for providing close spacing between the emitter mesa and the base ohmic metal of an InP-based heterojunction bipolar transistor. The sides in [011] crystallographic direction on the emitter electrode periphery were eliminated because the mesa planes of these sides revealed positive slope by wet etching. Thus, the emitter electrode was designed with a long hexagonal shape, whose major sides had a negatively inclined mesa plane. The selfaligned device fabricated by using these crystallographic characteristics of etching profile exhibited excellent high-frequency performance with fT of 168 GHz and fmax of 268 GHz, respectively, superior to a non-self-aligned one on the same epitaxy wafer.
- KSP Keywords
- Double heterojunction bipolar transistor(DHBT), Etching profile, Heterojunction Bipolar Transistors(HBTs), High Frequency(HF), High-frequency performance, InP-based, Mesa structure, Ohmic metal, Positive slope, Wet etching, self-Aligned