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Fabrication and Characteristics of 0.12 μm Single and Double-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a SiNx Pre-Passivation Layer
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- Authors
- Jong Won Lim, Ho Kyun Ahn, Hong Gu Ji, Woo Jin Chang, Jae Kyoung Mun, Hae Cheon Kim, Hyun Kyu Yu
- Issue Date
- 2006-12
- Citation
- Journal of the Korean Physical Society, v.49, no.3, pp.S774-S779
- ISSN
- 0374-4884
- Publisher
- 한국물리학회 (KPS)
- Language
- English
- Type
- Journal Article
- Abstract
- We report the fabrication and dc and microwave characteristics of 0.12-µm single and doublerecessed T-gate AlGaAs/InGaAs/GaAs pseudomorphic HEMTs (PHEMTs) using a SiNx prepassivation layer. 300-Å and 200-Å SiNx layers were deposited by plasma-enhanced chemical vapor deposition (PECVD) at 260℃ to protect the device and to define the gate footprint. The single and double-recessed processes were carried out by dry etching techniques. Completed double-recessed T-gate PHEMT devices exhibited a peak transconductance, gm, of 756 mS/mm, a current-gaincutoff frequency (fT) as high as 124 GHz, and a maximum oscillation frequency (fmax) of 247 GHz. We fabricated a 4-stage low-noise amplifier (LNA) comprising a two-finger 0.12 µm × 100 µm PHEMT in each stage. The chip size is 3.7 mm × 1.6 mm and the thickness is 100 µm.