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Simulation study on Heat Conduction of a Nanoscale Phase-Change Random Access Memory Cell
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- Authors
- JunHo Kim, Ki-Bong Song
- Issue Date
- 2006-11
- Citation
- Journal of Nanoscience and Nanotechnology, v.6, no.11, pp.3474-3478
- ISSN
- 1533-4880
- Publisher
- American Scientific Publishers (ASP)
- Language
- English
- Type
- Journal Article
- Abstract
- We have investigated heat transfer characteristics of a nano-scale phase-change random access memory (PRAM) cell using finite element method (FEM) simulation. Our PRAM cell is based on ternary chalcogenide alloy, Ge2Sb2Te5 (GST), which is used as a recording layer. For contact area of 100 × 100 nm2, simulations of crystallization and amorphization processes were carried out. Physical quantities such as electric conductivity, thermal conductivity, and specific heat were treated as temperature-dependent parameters. Through many simulations, it is concluded that one can reduce set current by decreasing both electric conductivities of amorphous GST and crystalline GST, and in addition to these conditions by decreasing electric conductivity of molten GST one can also reduce reset current significantly.
- KSP Keywords
- Chalcogenide alloys, Contact area, Finite Element(FE), Finite element method (FEM) simulation, Heat conduction, Heat transfer characteristics, Nano-Scale, Phase-change random access memory(PRAM), Physical quantities, Simulation study, Temperature-dependent parameters