상세정보
학술지
All-epitaxial InAlGaAs-InP VCSELs in the 1.3-1.6-μm wavelength range for CWDM band applications
- 발행일
- 200608
- 출처
- IEEE Photonics Technology Letters, v.18 no.16, pp.1717-1719
- ISSN
- 1041-1135
- 출판사
- IEEE
- 협약과제
- 05MB3600, 광엑세스용 광집적 모듈, 오광룡
- 초록
- All-epitaxial InAlGaAs-InP vertical-cavity surface- emitting lasers grown by metal-organic chemical vapor deposition were successfully demonstrated in the wavelength ranging from 1.3 to 1.6 μm. The devices showed the high performances such as single-mode output power of higher than 1.1 mW, sidemode suppression ratio of 37 dB, divergence angle of 9째, and CW operation of temperature up to 80 °C. We achieved the modulation bandwidth exceeding 2.5 Gb/s and power penalty free transmission over 30 km. © 2006 IEEE.
- KSP 제안 키워드
- Divergence angle, InAlGaAs-InP, Metalorganic chemical vapor deposition, Modulation bandwidth, Output power, Single-mode output, power penalty, side mode suppression ratio(SMSR), wavelength range