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학술지 All-epitaxial InAlGaAs-InP VCSELs in the 1.3-1.6-μm wavelength range for CWDM band applications
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저자
박미란, 권오균, 한원석, K.-H. Lee, S.-J. Park, B.-S. Yoo
발행일
200608
출처
IEEE Photonics Technology Letters, v.18 no.16, pp.1717-1719
ISSN
1041-1135
출판사
IEEE
DOI
https://dx.doi.org/10.1109/LPT.2006.879940
협약과제
05MB3600, 광엑세스용 광집적 모듈, 오광룡
초록
All-epitaxial InAlGaAs-InP vertical-cavity surface- emitting lasers grown by metal-organic chemical vapor deposition were successfully demonstrated in the wavelength ranging from 1.3 to 1.6 μm. The devices showed the high performances such as single-mode output power of higher than 1.1 mW, sidemode suppression ratio of 37 dB, divergence angle of 9째, and CW operation of temperature up to 80 °C. We achieved the modulation bandwidth exceeding 2.5 Gb/s and power penalty free transmission over 30 km. © 2006 IEEE.
키워드
Epitaxial, InAlGaAs, InP, Metal-organic chemical vapor deposition (MOCVD), Monolithic, Vertical-cavity surface-emitting laser (VCSEL)
KSP 제안 키워드
Divergence angle, InAlGaAs-InP, Metalorganic chemical vapor deposition, Modulation bandwidth, Output power, Single-mode output, power penalty, side mode suppression ratio(SMSR), vertical-cavity surface-emitting laser(VCSEL), wavelength range