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All-epitaxial InAlGaAs-InP VCSELs in the 1.3-1.6-/spl mu/m wavelength range for CWDM band applications
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- Authors
- M.-R. Park, O.-K. Kwon, W.-S. Han, K.-H. Lee, S.-J. Park, B.-S. Yoo
- Issue Date
- 2006-08
- Citation
- IEEE Photonics Technology Letters, v.18, no.16, pp.1717-1719
- ISSN
- 1041-1135
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- All-epitaxial InAlGaAs-InP vertical-cavity surface- emitting lasers grown by metal-organic chemical vapor deposition were successfully demonstrated in the wavelength ranging from 1.3 to 1.6 μm. The devices showed the high performances such as single-mode output power of higher than 1.1 mW, sidemode suppression ratio of 37 dB, divergence angle of 9째, and CW operation of temperature up to 80 °C. We achieved the modulation bandwidth exceeding 2.5 Gb/s and power penalty free transmission over 30 km. © 2006 IEEE.
- KSP Keywords
- Divergence angle, InAlGaAs-InP, Metalorganic chemical vapor deposition, Modulation bandwidth, Output power, Single-mode output, power penalty, side mode suppression ratio(SMSR), wavelength range