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Journal Article Temperature dependence of the first-order metal-insulator transition in VO2 and programmable critical temperature sensor
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Authors
Bong Jun Kim, Yong Wook Lee, Byung Gyu Chae, Sun Jin Yun, Soo Young Oh, Hyun Tak Kim, Yong Sik Lim
Issue Date
2006-12
Citation
Applied Physics Letters, v.90, no.2, pp.1-4
ISSN
0003-6951
Publisher
American Institute of Physics (AIP)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1063/1.2431456
Abstract
For V O2 -based two-terminal devices, the first-order metal-insulator transition (MIT, jump) is controlled by an applied voltage and temperature, and an intermediate monoclinic metal phase between the MIT and the structural phase transition (SPT) is observed. The conductivity of this phase linearly increases with increasing temperature up to TSPT ≈68 °C and becomes maximum at TSPT. Optical microscopic observation reveals the absence of a local current path in the metal phase. The current uniformly flows throughout the surface of the V O2 film when the MIT occurs. This device can be used as a programmable critical temperature sensor where the applied voltage is controlled by a program. © 2007 American Institute of Physics.