상세정보
학술지
Temperature Dependence of Mott Transition in VO2 and Programmable Critical Temperature Sensor
- 발행일
- 200612
- 출처
- Applied Physics Letters, v.90 no.2, pp.1-4
- ISSN
- 0003-6951
- 출판사
- American Institute of Physics (AIP)
- 초록
- For V O2 -based two-terminal devices, the first-order metal-insulator transition (MIT, jump) is controlled by an applied voltage and temperature, and an intermediate monoclinic metal phase between the MIT and the structural phase transition (SPT) is observed. The conductivity of this phase linearly increases with increasing temperature up to TSPT ≈68 °C and becomes maximum at TSPT. Optical microscopic observation reveals the absence of a local current path in the metal phase. The current uniformly flows throughout the surface of the V O2 film when the MIT occurs. This device can be used as a programmable critical temperature sensor where the applied voltage is controlled by a program. © 2007 American Institute of Physics.
- KSP 제안 키워드
- Critical temperature, Current Path, Increasing temperature, Metal phase, Microscopic observation, Mott transition, applied voltage, first-order, metal-insulator transition, process-voltage-temperature(PVT), structural phase transition