상세정보
학술지
Vertically Well-Aligned ZnO Nanowires on C-Al2O3 and GaN Substrates by Au Catalyst
- 발행일
- 200612
- 출처
- ETRI Journal, v.28 no.6, pp.787-789
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 협약과제
- 05MB4900, 차세대 고성능 광전자소자 및 스마트 생화학 센서 구현을 위한 IT-BT-NT 융합 핵심기술 개발, 맹성렬
- 초록
- In this letter, we report that vertically well-aligned ZnO nanowires were grown on GaN epilayers and c-plane sapphire via a vapor-liquid-solid process by introducing a 3 nm Au thin film as a catalyst. In our experiments, epitaxially grown ZnO nanowires on Au-coated GaN were vertically well-aligned while nanowires normally tilted from the surface when grown on Au-coated c-Al 2O3 substrates. However, pre-growth annealing of the Au thin layer on c-Al2O3 resulted in the growth of well-aligned nanowires in a normal surface direction. High-resolution transmission electron microscopy measurements showed that the grown nanowires have a hexagonal c-axis orientation with a single-crystalline structure.
- KSP 제안 키워드
- Au catalyst, Au thin film, Crystalline structure, Epitaxially grown, GaN substrate, Single-crystalline, Transmission Electron Microscopy(TEM), Vapor-liquid-solid process, Well-aligned, ZnO nanowire, aligned nanowires