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Journal Article
Vertically Well-Aligned ZnO Nanowires on C-Al2O3 and GaN Substrates by Au Catalyst
- Authors
- Hyun Kyu Park, Myung Hoon Oh, Sang Woo Kim, Gil Ho Kim, Doo Hyeob Youn, Sun Young Lee, Sang Hyeob Kim, Ki Chul Kim, Sung Lyul Maeng
- Issue Date
- 2006-12
- Citation
- ETRI Journal, v.28, no.6, pp.787-789
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- English
- Type
- Journal Article
- Abstract
- In this letter, we report that vertically well-aligned ZnO nanowires were grown on GaN epilayers and c-plane sapphire via a vapor-liquid-solid process by introducing a 3 nm Au thin film as a catalyst. In our experiments, epitaxially grown ZnO nanowires on Au-coated GaN were vertically well-aligned while nanowires normally tilted from the surface when grown on Au-coated c-Al 2O3 substrates. However, pre-growth annealing of the Au thin layer on c-Al2O3 resulted in the growth of well-aligned nanowires in a normal surface direction. High-resolution transmission electron microscopy measurements showed that the grown nanowires have a hexagonal c-axis orientation with a single-crystalline structure.
- KSP Keywords
- Au catalyst, Au thin film, Crystalline structure, Epitaxially grown, GaN substrate, Single-crystalline, Transmission Electron Microscopy(TEM), Vapor-liquid-solid process, Well-aligned, ZnO nanowire, aligned nanowires