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Journal Article
Charge Transport of Alkanethiol Self-Assembled Monolayers in Micro-Via Hole Devices
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- Authors
- Tae Wook Kim, Gun Uk Wang, Hyun Wook Song, Nak Jin Choi, Hyo Young Lee, Tak Hee Lee
- Issue Date
- 2006-12
- Citation
- Journal of Nanoscience and Nanotechnology, v.6, no.11, pp.3487-3490
- ISSN
- 1533-4880
- Publisher
- American Scientific Publishers (ASP)
- Language
- English
- Type
- Journal Article
- Abstract
- Correlation between defects and luminescence property from electroluminescent (EL) device composed of nanocrystalline silicon (nc-Si) prepared by wet and dry processes such as hydrofluoric (HF) acid solution treatment and annealing have investigated using electron spin resonance and EL measurements. The EL device using HF-treated nc-Si emitted strong red light, because of existence of only P?쾐e-centers (radiative recombination centers) on the surface vicinity. On the other hand, the EL device using annealed nc-Si above 400°C exhibited green luminescence by the reduction of particle size due to surface oxidation. When the annealing temperature was risen from 400°C up to 600°C, the green luminescence strengthened with increasing the P?쾐e-centers. These results indicate that the formation of many radiative recombination centers onto the nc-Si surface vicinity lead to the enhancement of green luminescence from the nc-Si based EL device. Copyright © 2006 American Scientific Publishers All rights reserved.
- KSP Keywords
- Acid solution, Alkanethiol self-assembled monolayers, Annealing temperature, Charge transport, EL device, Electron Spin Resonance, Luminescence property, Nanocrystalline silicon, Nc-Si, Radiative recombination, Red light