BROWSE
Detail
Journal Article
Characteristics of Self-aligned InP/InGaAs Heterojunction Bipolar Transistor Assisted by Silicon Nitride Sidewall
Cited - time in 
Share 
Share
- Authors
- Byoung-Gue Min, Jong-Min Lee, Seong-Il Kim, Chul-Won Ju, Kyung-Ho Lee
- Issue Date
- 2007-06
- Citation
- Solid State Phenomena, v.124-126, pp.97-100
- ISSN
- 1662-9779
- Publisher
- Scientific
- Language
- English
- Type
- Journal Article
- Abstract
- A reliable fabrication method for providing close spacing between the emitter mesa and the base contact metal of InP-based heterojunction bipolar transistor is disclosed. The silicon nitride sidewall was formed on the emitter electrode and mesa periphery. It was used as a mask for emitter mesa etching and also as an overhang to self-align the base contact with respect to the emitter mesa. The self-aligned device fabricated by this technique exhibited better high-frequency performances with fT of 138 GHz and fmax of 143 GHz, respectively, superior to the re-aligned one on the same epitaxy wafer.
- KSP Keywords
- 38 GHz, Fabrication method, Heterojunction Bipolar Transistors(HBTs), High Frequency(HF), InP-based, InP/InGaAs heterojunction, MESA etching, Silicon Nitride, self-Aligned