상세정보
학술대회
A Concurrent Dual-Band VCO with Dual Resonance in Single Resonator
- 발행일
- 200701
- 출처
- Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) 2007, pp.135-138
- 협약과제
- 06ZB1500, 실리콘-게르마늄 양자채널 나노 신소자 기술, 이상흥
- 초록
- In this paper, we present a new concurrent dual-band VCO with single resonator. The proposed oscillator is a new concurrent dual-band VCO, which does generate two bands of carrier frequencies simultaneously. One band is generated from 5.1 GHz to 5.5 GHz, and the other is from 8.5 GHz to 9.1 GHz. Low phase noises at 100 kHz offset are measured as - 111 dBc/Hz from 8.86 GHz and -114 dBc/Hz from 5.132 GHz, respectively. The concurrent dual-band VCO consumes a core current of 4 mA at 4.0 V The VCO has been fabricated using 0.8μm SiGe BiCMOS process.. © 2007 IEEE.
- KSP 제안 키워드
- 5 GHz, 6 GHz, Concurrent Dual-Band, Low phase noise, SiGe BiCMOS process