상세정보
학술지
Effective Metal Work Function of High-Pressure Hydrogen Postannealed Pt-Er Alloy Metal Gate on HfO2 Film
- 발행일
- 200701
- 출처
- Japanese Journal of Applied Physics, v.46 no.1, pp.125-127
- ISSN
- 0021-4922
- 출판사
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- 협약과제
- 06MB1600, 정보통신용 고기능 반도체 나노 신소자 기술, 이성재
- 초록
- We have investigated the effect of high-pressure hydrogen postannealing (HPHA) on the effective metal work function (過m,eff) of a Pt-Er alloy metal gate on a HfO2 film. By considering the presence of an interfacial layer (IL) between the HfO2 film and a Si substrate and a negative charge at the HfO2/IL interface, the 過m,eff values of the Pt-Er alloy metal gate before and after HPHA, extracted from the relations of equivalent oxide thickness versus flat-band voltage, are determined to be ~5.1 and ~4.8eV, respectively. The increase in the density of interface dipole caused by the reduction of PtOx during HPHA could be responsible for the decrease in 過m,eff. © 2007 The Japan Society of Applied Physics.
- KSP 제안 키워드
- Applied physics, Flat-band voltage, High-pressure hydrogen, Metal gate, Negative charge, Pt-Er alloy, Si substrate, equivalent oxide thickness, interface dipole, interfacial layer, metal work function