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Effective Metal Work Function of High-Pressure Hydrogen Postannealed Pt-Er Alloy Metal Gate on HfO2 Film
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- Authors
- Chel Jong Choi, Moon Gyu Jang, Yark Yeon Kim, Myung Sim Jun, Tae Youb Kim, Byoung Chul Park, Seong Jae Lee, Hyun Doek Yang, Ran Ju Jung, Man Chang, Hyun Sang Hwang
- Issue Date
- 2007-01
- Citation
- Japanese Journal of Applied Physics, v.46, no.1, pp.125-127
- ISSN
- 0021-4922
- Publisher
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Abstract
- We have investigated the effect of high-pressure hydrogen postannealing (HPHA) on the effective metal work function (過m,eff) of a Pt-Er alloy metal gate on a HfO2 film. By considering the presence of an interfacial layer (IL) between the HfO2 film and a Si substrate and a negative charge at the HfO2/IL interface, the 過m,eff values of the Pt-Er alloy metal gate before and after HPHA, extracted from the relations of equivalent oxide thickness versus flat-band voltage, are determined to be ~5.1 and ~4.8eV, respectively. The increase in the density of interface dipole caused by the reduction of PtOx during HPHA could be responsible for the decrease in 過m,eff. © 2007 The Japan Society of Applied Physics.
- KSP Keywords
- Applied physics, Flat-band voltage, High-pressure hydrogen, Metal gate, Negative charge, Pt-Er alloy, Si substrate, equivalent oxide thickness, interface dipole, interfacial layer, metal work function