상세정보
학술지
Pentacene Thin-film Transistors and Inverters with Plasma-enhanced Atomic-layer-deposited Al2O3 Gate Dielectric
- 발행일
- 200701
- 출처
- Thin Solid Films, v.515 no.5, pp.3132-3137
- ISSN
- 0040-6090
- 출판사
- Elsevier
- 협약과제
- 06ZB1300, 플라스틱 트랜지스터 소자/소재 기술, 김성현
- 초록
- The performances of pentacene thin-film transistor with plasma-enhanced atomic-layer-deposited (PEALD) 150혻nm thick Al2O3 dielectric are reported. Saturation mobility of 0.38혻cm2/V s, threshold voltage of 1혻V, subthreshold swing of 0.6혻V/decade, and on/off current ratio of about 108 have been obtained. Both depletion and enhancement mode inverter have been realized with the change of treatment method of hexamethyldisilazane on PEALD Al2O3 gate dielectric. Full swing depletion mode inverter has been demonstrated at input voltages ranging from 5혻V to - 5혻V at supply voltage of - 5혻V. © 2006 Elsevier B.V. All rights reserved.
- KSP 제안 키워드
- Full Swing, ON/OFF current ratio, Pentacene thin-film transistors, Plasma-enhanced, Saturation mobility, Supply voltage, Thin-Film Transistor(TFT), Treatment method, depletion mode, enhancement-mode, gate dielectric