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Journal Article
Pentacene Thin-film Transistors and Inverters with Plasma-enhanced Atomic-layer-deposited Al2O3 Gate Dielectric
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- Authors
- Jae Bon Koo, Jung Wook Lim, Seong Hyun Kim, Sun Jin Yun, Chan Hoe Ku, Sang Chul Lim, Jung Hun Lee
- Issue Date
- 2007-01
- Citation
- Thin Solid Films, v.515, no.5, pp.3132-3137
- ISSN
- 0040-6090
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- The performances of pentacene thin-film transistor with plasma-enhanced atomic-layer-deposited (PEALD) 150혻nm thick Al2O3 dielectric are reported. Saturation mobility of 0.38혻cm2/V s, threshold voltage of 1혻V, subthreshold swing of 0.6혻V/decade, and on/off current ratio of about 108 have been obtained. Both depletion and enhancement mode inverter have been realized with the change of treatment method of hexamethyldisilazane on PEALD Al2O3 gate dielectric. Full swing depletion mode inverter has been demonstrated at input voltages ranging from 5혻V to - 5혻V at supply voltage of - 5혻V. © 2006 Elsevier B.V. All rights reserved.
- KSP Keywords
- Full Swing, ON/OFF current ratio, Pentacene thin-film transistors, Plasma-enhanced, Saturation mobility, Supply voltage, Thin-Film Transistor(TFT), Treatment method, depletion-mode, enhancement-mode, gate dielectric