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Journal Article Nanoscale Observations on the Degradation Phenomena of Phase-Change Nonvolatile Memory Devices Using Ge2Sb2Te5
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Authors
Sung-Min Yoon, Kyu-Jeong Choi, Nam-Yeal Lee, Seung-Yun Lee, Young-Sam Park, Byoung-Gon Yu
Issue Date
2007-02
Citation
Japanese Journal of Applied Physics, v.46, no.4, pp.L99-L102
ISSN
0021-4922
Publisher
Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1143/JJAP.46.L99
Abstract
For the realization of highly reliable phase-change memory devices, it is very important to understand their operational failure modes. We presented the failure behavior of devices using Ge2Sb2Te5 (GST) as a phase-change material, in which the drift phenomenon of the current condition for reset and the degradation of switching speed for set were typically observed for some fabricated devices. The studies by a transmission electron microscopy (TEM) and an energy-dispersive X-ray spectroscopy (EDS) suggested that the compositional change of GST within the device is the reason for these results. It was also confirmed that the unexpected formation of a Ge-Te-based alloy may make the set speed slow down to 100 us. © 2007 The Japan Society of Applied Physics.
KSP Keywords
Applied physics, Current condition, Degradation phenomena, Failure mode, Non-Volatile Memory(NVM), Nonvolatile memory devices, Phase Change Material(PCM), Switching speed, energy dispersive X-ray spectroscopy(EDX), failure behavior, highly reliable