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60 GHz Amplifier MMICs and Module for 60 GHz WPAN System
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- Authors
- Woo Jin Chang, Jong Won Lim, Ho Kyun Ahn, Hae Cheon Kim, Hyun Kyu Yu
- Issue Date
- 2007-01
- Citation
- Radio and Wireless Symposium (RWS) 2007, pp.377-380
- Language
- English
- Type
- Conference Paper
- Abstract
- This paper introduces the design and the implementation of the 60 GHz amplifier MMICs and the module for the 60 GHz WPAN system with a RoF (Radioover-Fiber) link. The MMICs were designed using ETRFs 0.12 μm GaAs PHEMT 4-inch process. The MCLFs (Microstrip Coupled Line Filters) compared with the MTM (Metal-Insulator-Metal) capacitors have greater stability and less effect by the variation of fabrication. The 60 GHz drive amplifier MMIC and the 60 GHz power amplifier MMIC were designed by 4-stage structures using the MCLFs instead of the MIM capacitors for unconditional stability of the amplifiers and yields enhancement. The fabricated 60 GHz drive amplifier (DA) MMIC achieves a small signal gain (S21) of 22 dB, a gain flatness of 0.8 dB, an input reflection coefficient (S11) of -12 - -9 dB and an output reflection coefficient (S22) of -10 - -7 dB for 59.5 to 60.5 GHz. The fabricated 60 GHz power amplifier (PA) MMIC achieves an 521 of 15 dB, a gain flatness of 0.04 dB, an S11 of -12 dB, an 522 of -12 - -11 dB and an output P1dB of more than 14 dBm for 59.5 to 60.5 GHz. The chip sizes of the DA and the PA are 3.8 × 1.6 mm2 and 3.7 × 1.6 mm2, respectively. The waveguide-typed module was implemented with a DA MMIC and a PA MMIC. And it performed an S21 of 38 - 39 dB, a gain flatness of 1.2 dB, an S11 of -29 - -26 dB, an S22 of -16 -14 dB and an output P1dB of 12.3 - 14.3 dBm for 59.5 to 60.5 GHz. And the size of the module is 8.0 × 6.0 × 2.3 cm3. © 2007 IEEE.
- KSP Keywords
- 5 GHz, 60 GHz, GaAs pHemt, Gain flatness, Input Reflection Coefficient, MIM capacitor, Metal-insulator-metal, Microstrip Coupled Line, Power amplifier MMIC, Radio over fiber(ROF), Small signal gain