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학술대회 60 GHz Amplifier MMICs and Module for 60 GHz WPAN System
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저자
장우진, 임종원, 안호균, 김해천, 유현규
발행일
200701
출처
Radio and Wireless Symposium (RWS) 2007, pp.377-380
DOI
https://dx.doi.org/10.1109/RWS.2007.351847
협약과제
06MB1400, 60GHz Pico Cell 통신용 SoP, 유현규
초록
This paper introduces the design and the implementation of the 60 GHz amplifier MMICs and the module for the 60 GHz WPAN system with a RoF (Radioover-Fiber) link. The MMICs were designed using ETRFs 0.12 μm GaAs PHEMT 4-inch process. The MCLFs (Microstrip Coupled Line Filters) compared with the MTM (Metal-Insulator-Metal) capacitors have greater stability and less effect by the variation of fabrication. The 60 GHz drive amplifier MMIC and the 60 GHz power amplifier MMIC were designed by 4-stage structures using the MCLFs instead of the MIM capacitors for unconditional stability of the amplifiers and yields enhancement. The fabricated 60 GHz drive amplifier (DA) MMIC achieves a small signal gain (S21) of 22 dB, a gain flatness of 0.8 dB, an input reflection coefficient (S11) of -12 - -9 dB and an output reflection coefficient (S22) of -10 - -7 dB for 59.5 to 60.5 GHz. The fabricated 60 GHz power amplifier (PA) MMIC achieves an 521 of 15 dB, a gain flatness of 0.04 dB, an S11 of -12 dB, an 522 of -12 - -11 dB and an output P1dB of more than 14 dBm for 59.5 to 60.5 GHz. The chip sizes of the DA and the PA are 3.8 × 1.6 mm2 and 3.7 × 1.6 mm2, respectively. The waveguide-typed module was implemented with a DA MMIC and a PA MMIC. And it performed an S21 of 38 - 39 dB, a gain flatness of 1.2 dB, an S11 of -29 - -26 dB, an S22 of -16 -14 dB and an output P1dB of 12.3 - 14.3 dBm for 59.5 to 60.5 GHz. And the size of the module is 8.0 × 6.0 × 2.3 cm3. © 2007 IEEE.
KSP 제안 키워드
5 GHz, 60 GHz, GaAs pHemt, Gain flatness, Input Reflection Coefficient, MIM capacitor, Metal-insulator-metal, Microstrip Coupled Line, Power amplifier MMIC, Radio over fiber(ROF), Small signal gain