ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

논문 검색
구분 SCI
연도 ~ 키워드

상세정보

학술지 Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition
Cited 10 time in scopus Download 1 time Share share facebook twitter linkedin kakaostory
저자
윤선진, 구재본, 임정욱, 김성현
발행일
200703
출처
Electrochemical and Solid-State Letters, v.10 no.3, pp.H90-H93
ISSN
1099-0062
출판사
Electrochemical Society (ECS)
DOI
https://dx.doi.org/10.1149/1.2426408
초록
The effect of the dielectric constant and surface roughness of gate dielectrics on the electrical performance of pentacene-thin-film transistor (TFT) was investigated using high- 觀 ZrO2 films deposited by plasma-enhanced atomic layer deposition. The dielectric constant of ZrO2 (觀 ZrO2) was in the range of 15.6-33.0, and the surface roughness was increased with 觀 ZrO2 in the presently reported devices. Threshold voltage and subthreshold swing were effectively reduced with increasing 觀 ZrO2 and were remarkably low, with values of -0.42 V and 0.15 Vdec, respectively, when 觀 ZrO2 =33.0. To the contrary, the carrier mobility was determined by the surface roughness of ZrO2 gate dielectrics. © 2007 The Electrochemical Society.
KSP 제안 키워드
42 V, Carrier mobility, Dielectric Constant, Plasma-enhanced atomic layer deposition, Surface roughness, Thin-Film Transistor(TFT), dielectric layer, electrical performance, gate dielectric, subthreshold swing(SS), thin film(TF)