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Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition
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- Authors
- Sun Jin Yun, Jae Bon Koo, Jung Wook Lim, Seong Hyun Kim
- Issue Date
- 2007-03
- Citation
- Electrochemical and Solid-State Letters, v.10, no.3, pp.H90-H93
- ISSN
- 1099-0062
- Publisher
- Electrochemical Society (ECS)
- Language
- English
- Type
- Journal Article
- Abstract
- The effect of the dielectric constant and surface roughness of gate dielectrics on the electrical performance of pentacene-thin-film transistor (TFT) was investigated using high- 觀 ZrO2 films deposited by plasma-enhanced atomic layer deposition. The dielectric constant of ZrO2 (觀 ZrO2) was in the range of 15.6-33.0, and the surface roughness was increased with 觀 ZrO2 in the presently reported devices. Threshold voltage and subthreshold swing were effectively reduced with increasing 觀 ZrO2 and were remarkably low, with values of -0.42 V and 0.15 Vdec, respectively, when 觀 ZrO2 =33.0. To the contrary, the carrier mobility was determined by the surface roughness of ZrO2 gate dielectrics. © 2007 The Electrochemical Society.
- KSP Keywords
- 42 V, Carrier mobility, Dielectric Constant, Plasma-enhanced atomic layer deposition, Surface roughness, Thin-Film Transistor(TFT), dielectric layer, electrical performance, gate dielectric, subthreshold swing(SS), thin film(TF)