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Enhancement of Luminance Characteristics in Top-Emission Organic Light Emitting Diode with Cr/Al/Cr Anodes
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- Authors
- Sung Mook Chung, Chi-Sun Hwang, Jeong-Ik Lee, Sang Hee Ko Park, Yong Suk Yang, Lee-Mi DO, Hye Yong Chu
- Issue Date
- 2007-06
- Citation
- Japanese Journal of Applied Physics, v.46, no.6A, pp.3618-3621
- ISSN
- 0021-4922
- Publisher
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Abstract
- Top-emission organic light-emitting diodes (TEOLEDs) using chromium anode have been fabricated by employing two techniques: direct-current magnetron sputtering and e-beam evaporation. Atomic force microscopy and work function taken on the chromium film surfaces obtained from both techniques revealed that using dc magnetron sputtering is advantageous over e-beam evaporation in terms of surface characteristics particularly when the film is deposited. The anode having a triple-layer structure of Cr/Al/Cr was deposited on a Si wafer. The device structure of the TEOLED was Cr (20 nm)/Al (100 nm)/ Cr (20 nm)/慣-napthylphenylbiphenyl diamine (NPB) (60nm)/tris(8-hydroxyquinoline) aluminum (Alq3) (60nm)/LiF (1nm)/Al (2nm)/Ag (20nm)/NPB (200 nm). The TEOLED containing the Cr layer deposited by dc magnetron sputtering method showed higher luminance and efficiency than that containing the Cr layer deposited by e-beam evaporation. The superior device characteristics of the TEOLED containing the chromium layer deposited by dc magnetron sputtering have been investigated. ©2007 The Japan Society of Applied Physics.
- KSP Keywords
- 20 nm, 8-hydroxyquinoline(Aluminum tris-), Applied physics, Atomic force microscope(AFM), Chromium film, DC magnetron sputtering method, Device characteristics, Device structure, Direct current(DC), Direct-current magnetron sputtering, E-beam evaporation(EBE)