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Journal Article Analysis of Interface Trap States at Schottky Diode by using Equivalent Circuit Modeling
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Authors
Myung Sim Jun, Moon Gyu Jang, Yark Yeon Kim, Chel Jong Choi, Tae Youb Kim, Byung Chul Park, Seong Jae Lee
Issue Date
2007-01
Citation
Journal of Vacuum Science and Technology B, v.25, no.1, pp.82-85
ISSN
1071-1023
Publisher
American Vacuum Society (AVS)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1116/1.2406066
Abstract
The authors have developed a new equivalent circuit model to analyze the charging dynamics of the interface states in Schottky barrier diodes at reverse bias condition. Trap density and the capture/emission times are extracted by incorporating the measured ac admittance of erbium silicide Schottky diode with the newly developed equivalent circuit model. The extracted trap density is 1.5× 1012 cm-2 eV-1 and the capture and emission transition times are 19 and 5.9 μs, respectively. Trap density decreases to 6.1× 109 cm-2 eV-1 after N2 annealing. © 2007 American Vacuum Society.
KSP Keywords
AC Admittance, Equivalent circuit modeling, Erbium silicide, Interface states, Interface trap states, Reverse bias, charging dynamics, equivalent circuit model(ECM), schottky barrier diode(SBD), schottky diode, trap density