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Journal Article
Analysis of Interface Trap States at Schottky Diode by using Equivalent Circuit Modeling
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- Authors
- Myung Sim Jun, Moon Gyu Jang, Yark Yeon Kim, Chel Jong Choi, Tae Youb Kim, Byung Chul Park, Seong Jae Lee
- Issue Date
- 2007-01
- Citation
- Journal of Vacuum Science and Technology B, v.25, no.1, pp.82-85
- ISSN
- 1071-1023
- Publisher
- American Vacuum Society (AVS)
- Language
- English
- Type
- Journal Article
- Abstract
- The authors have developed a new equivalent circuit model to analyze the charging dynamics of the interface states in Schottky barrier diodes at reverse bias condition. Trap density and the capture/emission times are extracted by incorporating the measured ac admittance of erbium silicide Schottky diode with the newly developed equivalent circuit model. The extracted trap density is 1.5× 1012 cm-2 eV-1 and the capture and emission transition times are 19 and 5.9 μs, respectively. Trap density decreases to 6.1× 109 cm-2 eV-1 after N2 annealing. © 2007 American Vacuum Society.
- KSP Keywords
- AC Admittance, Equivalent circuit modeling, Erbium silicide, Interface states, Interface trap states, Reverse bias, charging dynamics, equivalent circuit model(ECM), schottky barrier diode(SBD), schottky diode, trap density