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Journal Article
Electric Characteristics of Organic Thin-film Transistors and Logic Circuits with a Ferroelectric Gate Insulator
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- Authors
- Yong Suk Yang, Hye Yong Chu, Seong Hyun Kim, Sang Chul Lim, Jae Bon Koo, Jung Hun Lee, Chan Hoe Ku, Jeong-Ik Lee, Lee-Mi Do, Chi Sun Hwang, Sang-He Ko Park, Gi Heon Kim, Sung Mook Jung
- Issue Date
- 2007-07
- Citation
- Thin Solid Films, v.515, no.19, pp.7688-7691
- ISSN
- 0040-6090
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- Organic electronic devices using a pentacene have improved importantly in the last several years. We fabricated pentacene organic thin-film transistors (OTFTs) with dielectric SiO2 and ferroelectric Pb(Zr0.3,Ti0.7)O3 (PZT) gate insulators. The organic devices using SiO2 and PZT films had the field-effect mobility of approximately 0.1 and 0.004혻cm2/V s, respectively. The drain current in the transfer curve of pentacene/PZT transistors showed a hysteresis behavior originated in a ferroelectric polarization switching. In order to investigate the polarization effect of PZT gate dielectrics in a logic circuit, the simple voltage inverter using SiO2 and PZT films was fabricated and measured by an output-input measurement. The gain of inverter at the poling-down state was approximately 7.2 and it was three times larger than the value measured at the poling-up state. © 2006 Elsevier B.V. All rights reserved.
- KSP Keywords
- AND logic, Drain current, Ferroelectric gate, Gate insulator, Organic devices, Organic thin-film transistors (otfts), PZT films, Thin-Film Transistor(TFT), electric characteristics, ferroelectric polarization, field-effect mobility