ETRI-Knowledge Sharing Plaform

KOREAN
논문 검색
Type SCI
Year ~ Keyword

Detail

Journal Article Electric Characteristics of Organic Thin-film Transistors and Logic Circuits with a Ferroelectric Gate Insulator
Cited 2 time in scopus Share share facebook twitter linkedin kakaostory
Authors
Yong Suk Yang, Hye Yong Chu, Seong Hyun Kim, Sang Chul Lim, Jae Bon Koo, Jung Hun Lee, Chan Hoe Ku, Jeong-Ik Lee, Lee-Mi Do, Chi Sun Hwang, Sang-He Ko Park, Gi Heon Kim, Sung Mook Jung
Issue Date
2007-07
Citation
Thin Solid Films, v.515, no.19, pp.7688-7691
ISSN
0040-6090
Publisher
Elsevier
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1016/j.tsf.2006.11.169
Abstract
Organic electronic devices using a pentacene have improved importantly in the last several years. We fabricated pentacene organic thin-film transistors (OTFTs) with dielectric SiO2 and ferroelectric Pb(Zr0.3,Ti0.7)O3 (PZT) gate insulators. The organic devices using SiO2 and PZT films had the field-effect mobility of approximately 0.1 and 0.004혻cm2/V s, respectively. The drain current in the transfer curve of pentacene/PZT transistors showed a hysteresis behavior originated in a ferroelectric polarization switching. In order to investigate the polarization effect of PZT gate dielectrics in a logic circuit, the simple voltage inverter using SiO2 and PZT films was fabricated and measured by an output-input measurement. The gain of inverter at the poling-down state was approximately 7.2 and it was three times larger than the value measured at the poling-up state. © 2006 Elsevier B.V. All rights reserved.