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학술대회 A Dual-band CMOS RF Front-end for 2.4/5.2 GHz Applications
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저자
Vu Kien Dao, 최병건, 박철순
발행일
200701
출처
Radio and Wireless Symposium (RWS) 2007, pp.145-148
DOI
https://dx.doi.org/10.1109/RWS.2007.351788
협약과제
06MB3300, 다중모드 SDR 단말용 디지털 RF 및 ADC 칩 개발, 최병건
초록
A dual-band RF front-end operating at 2.4 and 5.2 GHz is proposed. The dual-band RF front-end consists of a low noise amplifier and a single balance mixer which can be switched to operate at 2.4 and 5.2 GHz with the same hardware. In order to get the good performances at both frequency bands, the LNA uses a switched effective inductance in the input matching. The proposed RF front-end is designed with the 0.18 μm CMOS process with a supply voltage of 1.8V while dissipating a power of 16 mW. The front-end has conversion gains of 28 dB and 32 dB, DSB noise figure of 3.9 dB and 3.1 dB at 10 Mhz with RF frequency of the 2.4 GHz and 5.2 GHz, respectively. ©2007 IEEE.
KSP 제안 키워드
2.4 GHz, CMOS Process, CMOS RF, DSB noise figure, Dual-band, Effective inductance, Input matching, Noise Figure(NF), RF frequency, RF front end, Single balance