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A Dual-band CMOS RF Front-end for 2.4/5.2 GHz Applications
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- Authors
- Vu Kien Dao, Byoung Gun Choi, Chul Soon Park
- Issue Date
- 2007-01
- Citation
- Radio and Wireless Symposium (RWS) 2007, pp.145-148
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- A dual-band RF front-end operating at 2.4 and 5.2 GHz is proposed. The dual-band RF front-end consists of a low noise amplifier and a single balance mixer which can be switched to operate at 2.4 and 5.2 GHz with the same hardware. In order to get the good performances at both frequency bands, the LNA uses a switched effective inductance in the input matching. The proposed RF front-end is designed with the 0.18 μm CMOS process with a supply voltage of 1.8V while dissipating a power of 16 mW. The front-end has conversion gains of 28 dB and 32 dB, DSB noise figure of 3.9 dB and 3.1 dB at 10 Mhz with RF frequency of the 2.4 GHz and 5.2 GHz, respectively. ©2007 IEEE.
- KSP Keywords
- 2.4 GHz, CMOS Process, CMOS RF, DSB noise figure, Dual-band, Effective inductance, Input matching, Noise Figure(NF), RF frequency, RF front end, Single balance