상세정보
학술지
Enhanced Performance of Si Nanocrystal LEDs by Using Ni/Ag/Indium Tin Oxide Contact
- 발행일
- 200701
- 출처
- Electrochemical and Solid-State Letters, v.10 no.1, pp.J9-J11
- ISSN
- 1099-0062
- 출판사
- Electrochemical Society (ECS)
- 협약과제
- 06MB1600, 정보통신용 고기능 반도체 나노 신소자 기술, 이성재
- 초록
- We have investigated the NiAg /indium tin oxide (ITO) contacts to n-SiC films for silicon-nanocrystal (nc-Si) light-emitting diodes (LEDs). The electrical properties of the nc-Si LED with a thin NiAg interlayer was improved compared to that of the nc-Si LED without one. This was attributed to a decrease in the contact resistance due to the interfacial reaction at the contact region, which was confirmed by Auger depth profiles and high-resolution transmission electron microscope analyses. In addition, the light output power at a current of 20 mA was also enhanced by around 35%. This result strongly indicates that the NiAgITO contact can serve as a highly promising contact scheme to enhance the efficiency of the nc-Si LEDs. © 2006 The Electrochemical Society.
- KSP 제안 키워드
- Auger depth profiles, Contact region, Contact resistance(73.40.Cg), High-resolution transmission electron microscope, Interfacial reaction, Light output power(Lop), Light-emitting diodes (leds), Nc-Si, Si LED, Si nanocrystal, SiC film