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Journal Article
Enhanced Performance of Si Nanocrystal LEDs by Using Ni∕Ag/Indium Tin Oxide Contact
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- Authors
- Chul Huh, Jae-Heon Shin, Kyung-Hyun Kim, Chel-Jong Choi, Kwan Sik Cho, Jong Cheol Hong, Gun Yong Sung
- Issue Date
- 2007-01
- Citation
- Electrochemical and Solid-State Letters, v.10, no.1, pp.J9-J11
- ISSN
- 1099-0062
- Publisher
- Electrochemical Society (ECS)
- Language
- English
- Type
- Journal Article
- Abstract
- We have investigated the NiAg /indium tin oxide (ITO) contacts to n-SiC films for silicon-nanocrystal (nc-Si) light-emitting diodes (LEDs). The electrical properties of the nc-Si LED with a thin NiAg interlayer was improved compared to that of the nc-Si LED without one. This was attributed to a decrease in the contact resistance due to the interfacial reaction at the contact region, which was confirmed by Auger depth profiles and high-resolution transmission electron microscope analyses. In addition, the light output power at a current of 20 mA was also enhanced by around 35%. This result strongly indicates that the NiAgITO contact can serve as a highly promising contact scheme to enhance the efficiency of the nc-Si LEDs. © 2006 The Electrochemical Society.
- KSP Keywords
- Auger depth profiles, Contact region, Contact resistance(73.40.Cg), High-resolution transmission electron microscope, Interfacial reaction, Light output power(Lop), Light-emitting diodes (leds), Nc-Si, Si LED, Si nanocrystal, SiC film