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학술지 Physics and Device Structures of Highly Efficient Silicon Quantum Dots Based Silicon Nitride Light-Emitting Diodes
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저자
성건용, 박래만, 신재헌, 김경현, 김태엽, 조관식, 허철
발행일
200611
출처
IEEE Journal of Selected Topics in Quantum Electronics, v.12 no.6, pp.1545-1555
ISSN
1077-260X
출판사
IEEE
DOI
https://dx.doi.org/10.1109/JSTQE.2006.885391
협약과제
06MB1600, 정보통신용 고기능 반도체 나노 신소자 기술, 이성재
초록
An electrically driven light emitter from silicon is a long-standing problem in silicon photonics. Recently, significant progress has been made using silicon quantum dots (Si QDs) embedded in the silicon nitride thin films, transparent doping layers and electrodes, and surface-modified structures. This paper provides an overview of the progress in the device physics and fabrications of the Si QD light-emitting diodes (LEDs) including new device structures to improve the light extraction efficiency as well as highlights in the growth of the Si QDs and their quantum confinement effects (QCEs). © 2006 IEEE.
키워드
Distributed bragg reflector (DBR), Full-color emission, Light-emitting diode (LED), Nanocrystals, Quantum confinement effect (QCE), Silicon quantum dot (Si QD), Tunneling
KSP 제안 키워드
Device structure, Distributed Bragg reflector, Light-emitting diodes (leds), Quantum Dot(QD), Quantum confinement effects, Si QDs, Silicon Nitride, Silicon photonics, Silicon quantum dots, Surface-modified, device physics