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Influence of Gate Head Dimensions on the Device Performance of 0.12um PHEMT
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- Issue Date
- 2007-12
- Citation
- Asia-Pacific Microwave Conference (APMC) 2007, pp.1-4
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- In this paper, the fabrication technology of SIN- a ssisted 0.12um double deck T-gate AlGaAs/InGaAs p-HEMT and 60GHz-band MMICs for high rate personal area network (WPAN) systems is described. The effect of the gate head dimension, such as the 1st-deck and the 2nd-deck gate head size, on the DC and RF characteristics of the p-HEMT device and the device performance at the optimum gate head size are also presented. At the optimum gate head size, the p-HEMT device with two finger gates of 0.12um length and 50um width showed an extrinsic transconductance of 511mS/mm and a drain current of 20.6mA at 1.5V of drain voltage. The cut-off frequency and the maximum frequency of oscillation were 96.8GHz and 192.6GHz, respectively. Gate head dimensions of the p-HEMT device are correlated to parasitic capacitances, including Cgs, which effect the RF performance including a cut-off frequency (fT) and a maximum frequency of oscillation (fmax).
- KSP Keywords
- Drain current, Drain voltage, Head size, High rate, Maximum Frequency, Parasitic Capacitance, Personal Area Network, RF characteristics, RF performance, T-Gate, cutoff frequency