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Conference Paper A CMOS Burst-Mode TIA with Step AGC and Selective Internally Created Reset for 1.25Gb/s EPON
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Authors
Quan Le, Sang-Gug Lee, Ho-Yong Kang, Sang-Hoon Chai
Issue Date
2007-02
Citation
International Solid-State Circuits Conference (ISSCC) 2007, pp.50-51
Language
English
Type
Conference Paper
DOI
https://dx.doi.org/10.1109/ISSCC.2007.373582
Abstract
A selective internal reset mechanism that allows the burst-mode TIA to recover a burst-mode signal as a stand-alone device in EPON is discussed. Using step AGC, the TIA achieves a DR of 27dB and a sensitivity of -31dBm with a PIN photodiode. Moreover, with internal reset, the loud/soft ratio is also 27dB within 100ns guard and preamble times. ©2007 IEEE.