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Journal Article
Temperature Dependence of Metal-Insulator Transition in Mn-Doped p-Type GaAs
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- Authors
- Sungyoul Choi, Bong-Jun Kim, Yong-Wook Lee, Hyun-Tak Kim, Jeong Yong Choi, Sung Lae Cho
- Issue Date
- 2007-03
- Citation
- Journal of the Korean Physical Society, v.50, no.3, pp.844-847
- ISSN
- 0374-4884
- Publisher
- 한국물리학회 (KPS)
- Language
- English
- Type
- Journal Article
- Abstract
- We have successfully fabricated an epitaxial Mn-doped p-type GaAs thin film on a GaAs(001) substrate by using molecular beam epitaxy at a substrate temperature of 500°C. For the Mn-doped GaAs thin film with a hole concentration of np ≈ 2.0 × 1017 cm-3, an abrupt first-order metal-insulator transition (MIT) is observed at room temperature. The temperature dependence of the resistivity does not show a structural phase transition up to 420 K. The MIT temperature is controlled by applying a voltage without external hole doping. The abrupt MIT is discussed, along with breakdown.
- KSP Keywords
- Field effect transistors(Substrate temperature), First order, Hole concentration, Mn-doped, Molecular beam epitaxy(MBE), Room-temperature, hole doping, metal-insulator transition, p-Type, structural phase transition, temperature dependence