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Journal Article Temperature Dependence of Metal-Insulator Transition in Mn-Doped p-Type GaAs
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Authors
Sungyoul Choi, Bong-Jun Kim, Yong-Wook Lee, Hyun-Tak Kim, Jeong Yong Choi, Sung Lae Cho
Issue Date
2007-03
Citation
Journal of the Korean Physical Society, v.50, no.3, pp.844-847
ISSN
0374-4884
Publisher
한국물리학회 (KPS)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.3938/jkps.50.844
Abstract
We have successfully fabricated an epitaxial Mn-doped p-type GaAs thin film on a GaAs(001) substrate by using molecular beam epitaxy at a substrate temperature of 500°C. For the Mn-doped GaAs thin film with a hole concentration of np ≈ 2.0 × 1017 cm-3, an abrupt first-order metal-insulator transition (MIT) is observed at room temperature. The temperature dependence of the resistivity does not show a structural phase transition up to 420 K. The MIT temperature is controlled by applying a voltage without external hole doping. The abrupt MIT is discussed, along with breakdown.
KSP Keywords
Field effect transistors(Substrate temperature), First order, Hole concentration, Mn-doped, Molecular beam epitaxy(MBE), Room-temperature, hole doping, metal-insulator transition, p-Type, structural phase transition, temperature dependence