상세정보
학술지
Microscopic Behavior of Sb in Chalcogenide Materials for Crystallization Process
- 발행일
- 200703
- 출처
- Materials Science and Engineering A, v.449-451, pp.573-577
- ISSN
- 0921-5093
- 출판사
- Elsevier
- 협약과제
- 06MB3500, 유비쿼터스용 CMOS 기반 MEMS 복합센서기술개발, 최창억
- 초록
- The microscopic behavior of the chalcogenides materials alloys has been investigated for the understanding of the crystallization process. To analyze the crystallization-amorphization temperature by endo-exothermic process differential scanning calorimetry is carried out. Knowing the crystallization activation energy, we have performed in situ transmission electron microscopy with heating-rate change. With increasing temperature, as-deposited amorphous films transform to the crystalline phase, and Sb depletion takes place near 573 K. For the calculation of activation energy, the measured data obtained from heating-rate changes is plotted according to the Kissinger equation. The crystallization activation energy of the chalcogenide material is 2.03 짹 0.2 eV. © 2006 Elsevier B.V. All rights reserved.
- KSP 제안 키워드
- Amorphous films, As-deposited, Chalcogenide material, Crystallization activation energy, Differential scanning calorimetry(photo-DSC), Exothermic process, Increasing temperature, Kissinger equation, Microscopic behavior, Scanning calorimetry(DSC), Transmission Electron Microscopy(TEM)