상세정보
학술지
Analysis of the Surface Morphology and the Resistance of VO2 Thin Films on M-Plane Al2O3
- 발행일
- 200703
- 출처
- Journal of the Korean Physical Society, v.50 no.3, pp.653-656
- ISSN
- 0374-4884
- 출판사
- 한국물리학회 (KPS)
- 초록
- In order to fabricate high quality VO2 thin films undergoing metal-insulator transition around 340 K, we have investigated their growth conditions on M-plane Al2O3 substrates by using pulsed laser deposition. VO2 thin films have a large resistance variation of ~104 with temperature. XRD data show the formation of VO 2, as well as several other phases of vanadium oxides. The vanadium of the surface morphologies with the growth conditions was examined using a scanning electron microscope. From the analysis, we deduce that isolated grains are formed for a high oxygen ambient at a high growth temperature. Also voids between isolated grains cause a very high resistance.
- KSP 제안 키워드
- Growth conditions, High resistance, Oxygen ambient, Pulsed-laser deposition(PLD), VO 2, Vanadium oxide, XRD data, growth temperature, m-Plane, metal-insulator transition, resistance variation