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Journal Article
Packaged Broadband Amplifier for 40-Gb/s Optical Transmission Systems in InP HBT Technology
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- Authors
- Jong-Min Lee, Seong-Il Kim, Byoung-Gue Min, Chul-Won Ju, Kyung-Ho Lee
- Issue Date
- 2007-03
- Citation
- Journal of the Korean Physical Society, v.50, no.3, pp.871-874
- ISSN
- 0374-4884
- Publisher
- 한국물리학회 (KPS)
- Language
- English
- Type
- Journal Article
- Abstract
- A broadband amplifier for 40-Gb/s optical transmission systems was developed by using molecular-beam-epitaxy-based InGaAs/InP heterojunction bipolar transistor (HBT) technology. The developed InGaAs/InP HBTs showed a cut-off frequency (fT) of 129 GHz and a maximum oscillation frequency (fmax) of 175 GHz. The design and the performance of an InGaAs/InP broad-band amplifier for 40-Gb/s receiver applications are presented. The on-wafer developed broadband amplifier provides a bandwidth of 30.5 GHz and a gain of 19.2 dB. Packaged broadband amplifier modules were successfully fabricated. A 40-Gb/s data eye with a 403 mVpp amplitude of the fabricated broadband amplifier module was achieved by using 40-Gb/s multiplexing voltage input signals.
- KSP Keywords
- 5 GHz, Broadband amplifier, Heterojunction Bipolar Transistors(HBTs), InP HBT, Molecular beam epitaxy(MBE), Transmission system, cutoff frequency, maximum oscillation frequency, on-wafer, optical transmission