상세정보
학술지
Packaged Broadband Amplifier for 40-Gb/s Optical Transmission Systems in InP HBT Technology
- 발행일
- 200703
- 출처
- Journal of the Korean Physical Society, v.50 no.3, pp.871-874
- ISSN
- 0374-4884
- 출판사
- 한국물리학회 (KPS)
- 협약과제
- 06MB2100, 40G 모듈, 이명현
- 초록
- A broadband amplifier for 40-Gb/s optical transmission systems was developed by using molecular-beam-epitaxy-based InGaAs/InP heterojunction bipolar transistor (HBT) technology. The developed InGaAs/InP HBTs showed a cut-off frequency (fT) of 129 GHz and a maximum oscillation frequency (fmax) of 175 GHz. The design and the performance of an InGaAs/InP broad-band amplifier for 40-Gb/s receiver applications are presented. The on-wafer developed broadband amplifier provides a bandwidth of 30.5 GHz and a gain of 19.2 dB. Packaged broadband amplifier modules were successfully fabricated. A 40-Gb/s data eye with a 403 mVpp amplitude of the fabricated broadband amplifier module was achieved by using 40-Gb/s multiplexing voltage input signals.
- KSP 제안 키워드
- 5 GHz, Broadband amplifier, Cut-off frequency, Heterojunction Bipolar Transistors(HBTs), InP HBT, Molecular beam epitaxy(MBE), Transmission system, maximum oscillation frequency, on-wafer, optical transmission