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Journal Article
Gate Recess Process for 80-nm T-Shaped Gate Metamorphic HEMTs on GaAs Substrates
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- Authors
- Hyung Sup Yoon, Jae Yeob Shim, Ju Yeon Hong, Dong Min Kang, Kyung Ho Lee
- Issue Date
- 2007-03
- Citation
- Journal of the Korean Physical Society, v.50, no.3, pp.889-892
- ISSN
- 0374-4884
- Publisher
- 한국물리학회 (KPS)
- Language
- English
- Type
- Journal Article
- Abstract
- A gate recess process was developed to control the gate recess depth and the short lateral etching width for device fabrication, and a metamorphic HEMT (MHEMT) device with an 80-nm T-shaped gate was demonstrated using this gate recess process. A reduced lateral recess width of 53-nm was obtained on the etch side of a T-shaped gate for the gate recess process. The DC and the microwave characteristics of 80-nm MHEMT devices with In0.53Ga0.47As channels was investigated. The 80 nm × 100 μm MHEMT device showed a high gate-to-drain breakdown voltage of -7.5 V, an extrinsic transconductance of 900 mS/mm, and a threshold voltage of -0.6 V. The obtained cut-off frequency and maximum frequency of oscillation were 230 GHz and 300 GHz, respectively. This excellent device performance is attributed to the reduced gate length and lateral recess width for this device fabrication process.
- KSP Keywords
- 30 GHz, 300 GHz, Breakdown voltage(BDV), GaAs substrates, Gate recess, Maximum Frequency, T-shaped gate, cutoff frequency, device fabrication, device performance, fabrication process