상세정보
학술지
Estimates of the Photo-Response Characteristics of a Non-Fully-Depleted Silicon p-i-n Photodiode for the Near Infrared Spectral Range and the Experimental Results
Cited - time in 
Download 0 time
Share 
Download 0 time
Share
- 발행일
- 200704
- 출처
- Journal of the Korean Physical Society, v.50 no.4, pp.1156-1162
- ISSN
- 0374-4884
- 출판사
- 한국물리학회 (KPS)
- 협약과제
- 07MB1300, IT 융합기술인프라 구축, 강진영
- 초록
- We have estimated the responsivity and the rise time of a non-fully-depleted silicon p-i-n photodiode. The estimate of the rise time was done by considering the undepleted intrinsic layer resistance and the drift velocity at low electric field. Our research shows that there exists an optimum intrinsic layer resistivity for the fastest photo-response characteristics at a given condition. The maximum responsivity is 0.72 A/W and the fastest rise time is 14 ns for a 24-V operation voltage at a 900-nm wavelength when an 80-μm depletion width is formed on a high-resistive, n-type wafer of 380 μm in thickness. Based on our considerations, we fabricated a high-performance silicon p-i-n photodiode for near IR measurement and analyzed its characteristics. In spite of the optical loss caused by the IR filter, the responsivity for a 900-nm wavelength was 0.67 A/W, and the rise time was about 20 ns at 24 V. These values were well consistent with our estimates when are considered the parasitic capacitance caused by the package, and were excellent compared with those from conventional photodiodes.
- KSP 제안 키워드
- Drift velocity, Fully depleted(FD), High performance, IR filter, Low electric field, N-type, Near-IR, Near-Infrared(NIR), Optical loss, PIN photodiodes, Parasitic Capacitance