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Vertical stacks of shape-engineered InAs∕InAlGaAs quantum dot and its influences on the lasing characteristics
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- Authors
- Jin Soo Kim, Cheul-Ro Lee, Byung Seok Choi, Ho-Sang Kwack, Chul Wook Lee, Eun Deok Sim, Dae Kon Oh
- Issue Date
- 2007-04
- Citation
- Applied Physics Letters, v.90, no.15, pp.1-3
- ISSN
- 0003-6951
- Publisher
- American Institute of Physics (AIP)
- Language
- English
- Type
- Journal Article
- Abstract
- The formation characteristics on the vertical stacks of shape-engineered InAs/InAlGaAs quantum dots (QDs), which were formed by the alternate growth method (AGQDs), were studied in terms of the modulation in strain field and phase separation. The threshold current of the broad-area laser diodes (LDs) with five stacks of the AGQDs (AGQD-LDs) was 4.5 times smaller than that of the LDs with seven stacks of the conventionally grown QDs (CQD-LDs). The slope efficiency for the AGQD-LDs was 0.16 W/A, which was higher than that of the CQD-LDs of 0.9 W/A. These results can be attributed to better confinement of the electron wave function in QDs. © 2007 American Institute of Physics.