상세정보
학술지
Vertical Stacks of Shape-engineered InAs/InAlGaAs Quantum Dot and Its Influences on the Lasing Characteristics
- 발행일
- 200704
- 출처
- Applied Physics Letters, v.90 no.15, pp.1-3
- ISSN
- 0003-6951
- 출판사
- American Institute of Physics (AIP)
- 협약과제
- 06MB2500, 광통신용 반도체 양자점 레이저 다이오드 기술, 오대곤
- 초록
- The formation characteristics on the vertical stacks of shape-engineered InAs/InAlGaAs quantum dots (QDs), which were formed by the alternate growth method (AGQDs), were studied in terms of the modulation in strain field and phase separation. The threshold current of the broad-area laser diodes (LDs) with five stacks of the AGQDs (AGQD-LDs) was 4.5 times smaller than that of the LDs with seven stacks of the conventionally grown QDs (CQD-LDs). The slope efficiency for the AGQD-LDs was 0.16 W/A, which was higher than that of the CQD-LDs of 0.9 W/A. These results can be attributed to better confinement of the electron wave function in QDs. © 2007 American Institute of Physics.
- KSP 제안 키워드
- Electron wave, Growth method, Laser diode(LD), Lasing characteristics, Phase separation, Quantum Dot(QD), Shape-engineered, Slope efficiency, Strain field, Threshold current, broad-Area laser