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Characteristics of a Driver Amplifier Integrated 40 Gb/s EML Module
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- Issue Date
- 2007-05
- Citation
- Electronic Components and Technology Conference (ECTC) 2007, pp.1994-1999
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- Driver Amplifier Integrated (DAI) 40 Gb/s Electroabsorption Modulator-Integrated DFB Laser (EML) modules were developed. The Selective area growth (SAG) method were first adopted for fabricating 40 Gb/s EML devices and test showed that the measured 3 dB bandwidth of the Electrical-to-Optical (E/O) response reached about 45 GHz, with a return loss (S11) of below -10 dB up to 50 GHz for the devices. For this System-on-Package (SoP) module, a right angle bent coplanar waveguide (CPW) was also developed and, consequently, it was possible to achieve a parallel progression of RF and light. The measured S11 and S21 of the right angle bent CPW was maintained below -10 dB up to 35 GHz and 1.4dB up to 40 GHz respectively. The measured S11 of the fabricated DAI 40 Gb/s EML module was maintained below -6 dB up to about 40 GHz and the 3 dB bandwidth of the E/O response reached about 30 GHz under conditions of an operating temp 25°C, modulator bias 1.4 V and an LD current of 40 mA. © 2007 IEEE.
- KSP Keywords
- 3-dB bandwidth, 3.5 GHz, 30 GHz, 40 gb/s, 45 GHz, Coplanar Waveguide Feeding(CPW), DFB laser, Driver Amplifier, Return loss(RL), Right-angle, Selective area growth