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Conference Paper
P‐18: Improvement of Stability in ZnO TFT Under Bias Stress
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- Authors
- Chi-Sun Hwang, Sang-Hee Ko Park, Jeong-Ik Lee, Sung Mook Chung, Yong Suk Yang, Lee-Mi Do, Hye Yong Chu
- Issue Date
- 2007-05
- Citation
- Society for Information Display (SID) International Symposium 2007, pp.237-240
- Language
- English
- Type
- Conference Paper
- Abstract
- The stability of ZnO TFT under bias stress was investigated. Transparent ZnO thin films deposited by means of atomic layer deposition(ALD) and plasma enhanced atomic layer deposition(PEALD) at 100°C were used as the active channel. The TFT with PEALD grown ZnO layer has better stability under bias stress than the TFT with ALD grown ZnO layer. © 2007 SID.
- KSP Keywords
- Active channel, Bias stress, Plasma-enhanced atomic layer deposition, ZnO layer, ZnO thin films, thin film(TF)