상세정보
학술대회
Improvement of Stability in ZnO TFT Under Bias Stress
- 발행일
- 200705
- 출처
- Society for Information Display (SID) International Symposium 2007, pp.237-240
- 협약과제
- 06MB4900, 투명전자 소자를 이용한 스마트 창, 조경익
- 초록
- The stability of ZnO TFT under bias stress was investigated. Transparent ZnO thin films deposited by means of atomic layer deposition(ALD) and plasma enhanced atomic layer deposition(PEALD) at 100°C were used as the active channel. The TFT with PEALD grown ZnO layer has better stability under bias stress than the TFT with ALD grown ZnO layer. © 2007 SID.
- KSP 제안 키워드
- Active channel, Bias stress, Plasma-enhanced atomic layer deposition, ZnO layer, ZnO thin films, thin film(TF)