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Conference Paper P‐18: Improvement of Stability in ZnO TFT Under Bias Stress
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Authors
Chi-Sun Hwang, Sang-Hee Ko Park, Jeong-Ik Lee, Sung Mook Chung, Yong Suk Yang, Lee-Mi Do, Hye Yong Chu
Issue Date
2007-05
Citation
Society for Information Display (SID) International Symposium 2007, pp.237-240
Language
English
Type
Conference Paper
DOI
https://dx.doi.org/10.1889/1.2785273
Abstract
The stability of ZnO TFT under bias stress was investigated. Transparent ZnO thin films deposited by means of atomic layer deposition(ALD) and plasma enhanced atomic layer deposition(PEALD) at 100°C were used as the active channel. The TFT with PEALD grown ZnO layer has better stability under bias stress than the TFT with ALD grown ZnO layer. © 2007 SID.
KSP Keywords
Active channel, Bias stress, Plasma-enhanced atomic layer deposition, ZnO layer, ZnO thin films, thin film(TF)