상세정보
학술지
Hysteresis and Threshold Voltage Shift of Pentacene Thin-film Transistors and Inverters with Al2O3 Gate Dielectric
- 발행일
- 200703
- 출처
- Applied Physics Letters, v.90 no.13, pp.1-3
- ISSN
- 0003-6951
- 출판사
- American Institute of Physics (AIP)
- 협약과제
- 06IB1500, 가교가 가능한 유기 능동 소재 기술 개발, 김성현
- 초록
- The pentacene organic thin-film transistors (OTFTs) with plasma-enhanced atomic-layer-deposited 150 nm thick Al2O3 as a gate dielectric and the inverters comprised of these OTFTs have been fabricated. The hysteresis in transfer characteristics of the OTFTs depends on the scan range of negative gate voltage, regardless of drain voltage. Negative gate-bias stress leads to the progressive negative shift of threshold voltage. The hysteresis of D inverter is similar to that of E inverter, but the former has a wider swing range and a higher gain in comparison with the latter. © 2007 American Institute of Physics.
- KSP 제안 키워드
- Drain voltage, Gate bias stress, Negative gate voltage, Negative shift, Organic thin-film transistors (otfts), Pentacene thin-film transistors, Plasma-enhanced, Thin-Film Transistor(TFT), Threshold voltage shift, gate dielectric, scan range