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Journal Article
Hysteresis and Threshold Voltage Shift of Pentacene Thin-film Transistors and Inverters with Al2O3 Gate Dielectric
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- Authors
- Jae Bon Koo, Chan Hoe Ku, Sang Chul Lim, Seong Hyun Kim, Jung Hun Lee
- Issue Date
- 2007-03
- Citation
- Applied Physics Letters, v.90, no.13, pp.1-3
- ISSN
- 0003-6951
- Publisher
- American Institute of Physics (AIP)
- Language
- English
- Type
- Journal Article
- Abstract
- The pentacene organic thin-film transistors (OTFTs) with plasma-enhanced atomic-layer-deposited 150 nm thick Al2O3 as a gate dielectric and the inverters comprised of these OTFTs have been fabricated. The hysteresis in transfer characteristics of the OTFTs depends on the scan range of negative gate voltage, regardless of drain voltage. Negative gate-bias stress leads to the progressive negative shift of threshold voltage. The hysteresis of D inverter is similar to that of E inverter, but the former has a wider swing range and a higher gain in comparison with the latter. © 2007 American Institute of Physics.
- KSP Keywords
- Drain voltage, Gate bias stress, Negative gate voltage, Negative shift, Organic thin-film transistors (otfts), Pentacene thin-film transistors, Plasma-enhanced, Thin-Film Transistor(TFT), Threshold voltage shift, gate dielectric, scan range