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Characteristics of 80 nm T-Gate Metamorphic HEMTx with 60 % Indium Channel
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- Authors
- Hyung Sup Yoon, Jae Yeob Shim, Dong Min Kang, Ju Yeon Hong, Kyung Ho Lee
- Issue Date
- 2007-05
- Citation
- International Conference on Indium Phosphide and Related Materials (IPRM) 2007, pp.110-113
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- The 80 nm T-gate metamorphic high electron mobility transistors (MHEMTs) with 60 % indium channel have been fabricated and the DC, microwave, and uniformity of the device were characterized. The MHEMT device showed the DC characteristics having an extrinsic transconductance of 1150 mS/mm and a gate breakdown voltage of - 6.2 V. The fT and fmax obtained for the 80 nm × 100 μm MHEMT device are 235 GHz and 290 GHz, respectively. The MHEMT exhibited uniform threshold voltage of - 0.47 V with a standard deviation of 0.045 V across the wafer. © 2007 IEEE.
- KSP Keywords
- 3.5 GHz, Breakdown voltage(BDV), DC Characteristics, High electron mobility transistor(HEMT), Standard deviation(STD), T-Gate, threshold voltage(Vth)