상세정보
학술대회
40 Gbps Electroabsorption Modulated DFB Laser with Tilted Facet Formed by Dry Etching
- 발행일
- 200705
- 출처
- International Conference on Indium Phosphide and Related Materials (IPRM) 2007, pp.267-270
- 협약과제
- 06MB2100, 40G 모듈, 이명현
- 초록
- We fabricated electroabsorption modulated distributed feedback (DFB) laser diodes for 40 Gbps application through selective-area growth method. The facet reflection was not sufficiently removed by just depositing antireflection coating on the as-cleaved facet and low frequency resonance occurred by optical feedback from facet to DFB laser. Tilted facet formed by dry etching processes successfully reduced the optical feedback and the resonance in E/O response decreased to as small as 2.8 dB. © 2007 IEEE.
- KSP 제안 키워드
- As 2, Distributed feedback (DFB) laser, Dry etching processes, Growth method, Laser diode(LD), Selective area growth, antireflection coating, low-frequency, optical feedback