상세정보
학술지
40 Gbps Electroabsorption Modulated DFB Laser with Tilted Facet Formed by Dry Etching
- 발행일
- 200706
- 출처
- Semiconductor Science and Technology, v.22 no.7, pp.802-805
- ISSN
- 0268-1242
- 출판사
- Institute of Physics (IOP)
- 협약과제
- 07MB2400, 휴대 단말기용 나노 플렉스블 광전배선 모듈, 주정진
- 초록
- We fabricated electroabsorption modulated distributed feedback (DFB) laser diodes for 40 Gbps application through the selective-area growth method. The facet reflection was not sufficiently removed by just depositing the anti-reflection coating so that low frequency resonance occurred by optical feedback from the facet to the DFB laser. A tilted facet formed by dry etching processes successfully reduced the optical feedback and the resonance in E/O response decreased significantly. © 2007 IOP Publishing Ltd.
- KSP 제안 키워드
- Distributed feedback (DFB) laser, Dry etching processes, Growth method, Laser diode(LD), Selective area growth, antireflection coating, low-frequency, optical feedback