BROWSE
Detail
Journal Article
40 Gbps Electroabsorption Modulated DFB Laser with Tilted Facet Formed by Dry Etching
Cited 9 time in 
Share 
Share
- Authors
- Joong-Seon Choe, Yong-Hwan Kwon, Jae-Sik Sim, Sung-Bock Kim
- Issue Date
- 2007-06
- Citation
- Semiconductor Science and Technology, v.22, no.7, pp.802-805
- ISSN
- 0268-1242
- Publisher
- Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Abstract
- We fabricated electroabsorption modulated distributed feedback (DFB) laser diodes for 40 Gbps application through the selective-area growth method. The facet reflection was not sufficiently removed by just depositing the anti-reflection coating so that low frequency resonance occurred by optical feedback from the facet to the DFB laser. A tilted facet formed by dry etching processes successfully reduced the optical feedback and the resonance in E/O response decreased significantly. © 2007 IOP Publishing Ltd.
- KSP Keywords
- Distributed feedback (DFB) laser, Dry etching processes, Growth method, Laser diode(LD), Selective area growth, antireflection coating, low-frequency, optical feedback