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학술지 Epitaxial Growth of ZnO Nanowall Networks on GaN/sapphire Substrates
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저자
김상우, 박현규, 이민수, 박래만, 박종혁, 김상협, 맹성렬, 최철종, 문승언
발행일
200701
출처
Applied Physics Letters, v.90 no.3, pp.1-3
ISSN
0003-6951
출판사
American Institute of Physics (AIP)
DOI
https://dx.doi.org/10.1063/1.2430918
협약과제
06MB4700, 차세대 고성능 광전자소자 및 스마트 생화학 센서 구현을 위한 IT-BT-NT 융합 핵심기술 개발, 맹성렬
초록
Heteroepitaxy of vertically well-aligned ZnO nanowall networks with a honeycomblike pattern on GaNc- Al2 O3 substrates by the help of a Au catalyst was realized. The ZnO nanowall networks with wall thicknesses of 80-140 nm and an average height of about 2 μm were grown on a self-formed ZnO thin film during the growth on the GaNc- Al2 O3 substrates. It was found that both single-crystalline ZnO nanowalls and catalytic Au have an epitaxial relation to the GaN thin film in synchrotron x-ray scattering experiments. Hydrogen-sensing properties of the ZnO nanowall networks have also been investigated. © 2007 American Institute of Physics.
KSP 제안 키워드
40 nm, Au catalyst, Epitaxial relation, Hydrogen-sensing properties, Nanowall networks, Sapphire substrates, Scattering experiments, Self-formed, Single-crystalline, Synchrotron X-ray scattering, Well-aligned