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Epitaxial Growth of ZnO Nanowall Networks on GaN/sapphire Substrates
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- Authors
- Sang-Woo Kim, Hyun-Kyu Park, Min-Su Yi, Nae-Man Park, Jong-Hyurk Park, Sang-Hyeob Kim, Sung-Lyul Maeng, Chel-Jong Choi, Seung-Eon Moon
- Issue Date
- 2007-01
- Citation
- Applied Physics Letters, v.90, no.3, pp.1-3
- ISSN
- 0003-6951
- Publisher
- American Institute of Physics (AIP)
- Language
- English
- Type
- Journal Article
- Abstract
- Heteroepitaxy of vertically well-aligned ZnO nanowall networks with a honeycomblike pattern on GaNc- Al2 O3 substrates by the help of a Au catalyst was realized. The ZnO nanowall networks with wall thicknesses of 80-140 nm and an average height of about 2 μm were grown on a self-formed ZnO thin film during the growth on the GaNc- Al2 O3 substrates. It was found that both single-crystalline ZnO nanowalls and catalytic Au have an epitaxial relation to the GaN thin film in synchrotron x-ray scattering experiments. Hydrogen-sensing properties of the ZnO nanowall networks have also been investigated. © 2007 American Institute of Physics.
- KSP Keywords
- 40 nm, Au catalyst, Epitaxial relation, Hydrogen-sensing properties, Nanowall networks, Sapphire substrates, Scattering experiments, Self-formed, Single-crystalline, Synchrotron X-ray scattering, Well-aligned