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Undoped Homojunction Chalcogen Thin-film Transistors on Glass
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- Authors
- Ki-Bong Song, Sang-Su Lee, Kyung-Am Kim, Jeong-Dae Suh, Jun-Ho Kim, Taek-Sung Lee, Byung-ki Cheong, Won-Mock Kim
- Issue Date
- 2007-06
- Citation
- Applied Physics Letters, v.90, no.26, pp.1-3
- ISSN
- 0003-6951
- Publisher
- American Institute of Physics (AIP)
- Language
- English
- Type
- Journal Article
- Abstract
- A technique to develop an undoped homojunction chalcogen thin-film transistor (UHJ-c-TFT) on glass is described. The UHJ-c-TFT is based on ternary chalcogenide alloy amorphous (慣) Ge2 Sb2 Te5 (GST) and the positively cooled crystalline () GST. The 慣 -GST and the positively cooled -GST are used as a channel layer and ohmic contact layer, respectively. In the UHJ-c-TFT, the authors realize electric rectification by the energy difference from the Fermi level of the 慣 -GST and the Fermi level of the positively cooled -GST. The UHJ-c-TFT shows the clear gate characteristics of a typical p -channel enhancement mode. © 2007 American Institute of Physics.
- KSP Keywords
- Chalcogenide alloys, Channel layer, Contact layer, Energy difference, Fermi level, Ohmic contact, Ternary chalcogenide, Thin-Film Transistor(TFT), enhancement-mode, thin film(TF)