13MB2100, Development of a-Si/SiGe tandem structure thin film solar cells of conversion efficiency 13% on flexible metal substrate,
Sun Jin Yun
Abstract
This work studies hydrogenated amorphous silicon germanium films, deposited by hot wire chemical vapor deposition, to be used as low band gap absorber material in thin film solar cells. Material properties, such as the bonding configurations, the ambipolar diffusion length and the optical band gap, were examined as a function of the substrate temperature and germanium content. Our best materials were incorporated in single junction solar cells with high long-wavelength response and a tandem solar cell with an efficiency of 10.42%.
KSP Keywords
Absorber material, Ambipolar diffusion, Diffusion length, Field effect transistors(Substrate temperature), Hot Wire chemical vapor deposition, Low band gap, Optical band gap, Silicon-germanium(SiGe), Single junction solar cells, Thin film solar cells, Work studies
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