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학술지 Optimization of Hydrogenated Amorphous Silicon Germanium Thin Films and Solar Cells Deposited by Hot Wire Chemical Vapor Deposition
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저자
L.W. Veldhuizen, C.H.M. van der Werf, Y. Kuanga, N.J. Bakker, 윤선진, R.E.I. Schropp
발행일
201511
출처
Thin Solid Films, v.595 no.Part B, pp.226-230
ISSN
0040-6090
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.tsf.2015.05.055
협약과제
13MB2100, 유연성 철강소재기판상에서 효율13%를 갖는 Si/SiGe 탠덤 박막태양전지개발, 윤선진
초록
This work studies hydrogenated amorphous silicon germanium films, deposited by hot wire chemical vapor deposition, to be used as low band gap absorber material in thin film solar cells. Material properties, such as the bonding configurations, the ambipolar diffusion length and the optical band gap, were examined as a function of the substrate temperature and germanium content. Our best materials were incorporated in single junction solar cells with high long-wavelength response and a tandem solar cell with an efficiency of 10.42%.
키워드
Ambipolar diffussion length, Amorphous silicon germanium, Hot wire chemical vapor deposition, Solar cells
KSP 제안 키워드
Absorber material, Ambipolar diffusion, Ambipolar diffussion length, Diffusion length, Field effect transistors(Substrate temperature), Hot Wire chemical vapor deposition, Low band gap, Optical band gap, Silicon-germanium(SiGe), Single junction solar cells, Thin film solar cells