상세정보
학술지
Direct Observation of the Structural Component of the Metal-Insulator Phase Transition and Growth Habits of Epitaxially Grown VO2 Nanowires
- 저자
- Jung-Inn Sohn, 주흥진, Alexandra E. Porter, 최철종, 김기남, Dae-Joon Kang, Mark E. Welland
- 발행일
- 200706
- 출처
- Nano Letters, v.7 no.6, pp.1570-1574
- ISSN
- 1530-6984
- 출판사
- American Chemical Society(ACS)
- 협약과제
- 07ZB1200, 정보통신미래신기술연구사업, 정태형
- 초록
- We have grown epitaxially orientation-controlled monoclinic VO2 nanowires without employing catalysts by a vapor-phase transport process. Electron microscopy results reveal that single crystalline VO2 nanowires having a [100] growth direction grow laterally on the basal c plane and out of the basal r and a planes of sapphire, exhibiting triangular and rectangular cross sections, respectively. In addition, we have directly observed the structural phase transition of single crystalline VO2 nanowires between the monoclinic and tetragonal phases which exhibit insulating and metallic properties, respectively, and clearly analyzed their corresponding relationships using in situ transmission electron microscopy. © 2007 American Chemical Society.
- KSP 제안 키워드
- Direct observation, Epitaxially grown, Rectangular cross sections, Single-crystalline, Structural component, Transmission Electron Microscopy(TEM), Vapor-phase transport process, growth direction, metal-insulator phase transition, metallic properties, situ Transmission Electron Microscopy