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Journal Article
Direct Observation of the Structural Component of the Metal-Insulator Phase Transition and Growth Habits of Epitaxially Grown VO2 Nanowires
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- Authors
- Jung Inn Sohn, Heung Jin Joo, Alexandra E. Porter, Chel-Jong Choi, Ki Nam Kim, Dae Joon Kang, Mark E. Welland
- Issue Date
- 2007-06
- Citation
- Nano Letters, v.7, no.6, pp.1570-1574
- ISSN
- 1530-6984
- Publisher
- American Chemical Society(ACS)
- Language
- English
- Type
- Journal Article
- Abstract
- We have grown epitaxially orientation-controlled monoclinic VO2 nanowires without employing catalysts by a vapor-phase transport process. Electron microscopy results reveal that single crystalline VO2 nanowires having a [100] growth direction grow laterally on the basal c plane and out of the basal r and a planes of sapphire, exhibiting triangular and rectangular cross sections, respectively. In addition, we have directly observed the structural phase transition of single crystalline VO2 nanowires between the monoclinic and tetragonal phases which exhibit insulating and metallic properties, respectively, and clearly analyzed their corresponding relationships using in situ transmission electron microscopy. © 2007 American Chemical Society.
- KSP Keywords
- Direct observation, Epitaxially grown, Rectangular cross-section, Single-crystalline, Structural component, Transmission Electron Microscopy(TEM), Vapor-phase transport process, growth direction, metal-insulator phase transition, metallic properties, situ Transmission Electron Microscopy