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학술지 Formation of Silicon Oxide Nanowires Directly from Au/Si and Pd-Au/Si Substrates
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저자
박현규, 양비룡, 김상우, 김길호, 윤두협, 김상협, 맹성렬
발행일
200703
출처
Physica E : Low-dimensional Systems and Nanostructures, v.37 no.1-2, pp.158-162
ISSN
1386-9477
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.physe.2006.08.003
협약과제
06MB4700, 차세대 고성능 광전자소자 및 스마트 생화학 센서 구현을 위한 IT-BT-NT 융합 핵심기술 개발, 맹성렬
초록
Amorphous silicon oxide (SiOx) nanowires were directly grown by thermal processing of Si substrates. Au and Pd-Au thin films with thicknesses of 3 nm deposited on Si (0 0 1) substrates were used as catalysts for the growth of nanowires. High-yield synthesis of SiOx nanowires was achieved by a simple heating process (1000-1150 °C) in an Ar ambient atmosphere without introducing any additional Si source materials. The as-synthesized products were characterized by field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, and transmission electron microscopy measurements. The SiOx nanowires with lengths of a few and tens of micrometers had an amorphous crystal structure. The solid-liquid-solid model of nanowire formation was shown to be valid. © 2006 Elsevier B.V. All rights reserved.
KSP 제안 키워드
Amorphous crystal, Amorphous silicon oxide, As-synthesized, Au thin film, High-yield synthesis, Pd-Au, Scanning electron microscopy(S.E.M.), Si source, Si substrate, SiOx nanowires, Silicon oxide nanowires