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Formation of silicon oxide nanowires directly from Au/Si and Pd–Au/Si substrates
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- Authors
- Hyun-Kyu Park, Bee Lyong Yang, Sang-Woo Kim, Gil-Ho Kim, Doo-Hyeb Youn, Sang-Hyeob Kim, Sung-Lyul Maeng
- Issue Date
- 2007-03
- Citation
- Physica E : Low-dimensional Systems and Nanostructures, v.37, no.1-2, pp.158-162
- ISSN
- 1386-9477
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- Amorphous silicon oxide (SiOx) nanowires were directly grown by thermal processing of Si substrates. Au and Pd-Au thin films with thicknesses of 3 nm deposited on Si (0 0 1) substrates were used as catalysts for the growth of nanowires. High-yield synthesis of SiOx nanowires was achieved by a simple heating process (1000-1150 °C) in an Ar ambient atmosphere without introducing any additional Si source materials. The as-synthesized products were characterized by field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, and transmission electron microscopy measurements. The SiOx nanowires with lengths of a few and tens of micrometers had an amorphous crystal structure. The solid-liquid-solid model of nanowire formation was shown to be valid. © 2006 Elsevier B.V. All rights reserved.
- KSP Keywords
- Amorphous crystal, Amorphous silicon oxide, As-synthesized, Au thin film, High-yield synthesis, Pd-Au, Scanning electron microscopy(S.E.M.), Si source, Si substrate, SiOx nanowires, Silicon oxide nanowires