상세정보
학술대회
A 45-to-60-GHz Two-Band SiGe:C VCO for Millimeter-Wave Applications
- 발행일
- 200706
- 출처
- Radio Frequency Integrated Circuits Symposium (RFIC) 2007, pp.709-712
- 협약과제
- 07MB1100, 60GHz Pico cell 통신용 SoP, 유현규
- 초록
- A 45 - 60-GHz two-band double cross-coupled differential VCO is designed and fabricated using 0.25 um SiG:C BiCMOS process technology whose f max greater than 200 GHz. The VCO provides tuning ranges of 44.9 - 48.9 GHz when its bias current is 13 mA and of 58 - 60.4 GHz when a bias current of 7 mA draws into the VCO. The phase noises of the VCO are measured as - 99 dBc/Hz from 48.86 GHz and - 93 dBc/Hz from 60.32 GHz, at 10 MHz offset, respectively. The VCO shows moderate FOMs of 156 dBc at 60.32 GHz and 158 dBc at 48.86 GHz. © 2007 IEEE.
- KSP 제안 키워드
- 200 GHz, 6 GHz, 60 GHz, BiCMOS process, Cross-coupled differential VCO, F max, Millimeter-wave applications, bias current, millimeter wave(mmWave), process technology