BROWSE
Detail
Conference Paper
A 45-to-60-GHz Two-Band SiGe: C VCO for Millimeter-Wave Applications
Cited 6 time in 
Share 
Share
- Authors
- Ja-Yol Lee, Sang-Heung Lee, Hae Cheon Kim, Hyun-Kyu Yu
- Issue Date
- 2007-06
- Citation
- Radio Frequency Integrated Circuits Symposium (RFIC) 2007, pp.709-712
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- A 45 - 60-GHz two-band double cross-coupled differential VCO is designed and fabricated using 0.25 um SiG:C BiCMOS process technology whose f max greater than 200 GHz. The VCO provides tuning ranges of 44.9 - 48.9 GHz when its bias current is 13 mA and of 58 - 60.4 GHz when a bias current of 7 mA draws into the VCO. The phase noises of the VCO are measured as - 99 dBc/Hz from 48.86 GHz and - 93 dBc/Hz from 60.32 GHz, at 10 MHz offset, respectively. The VCO shows moderate FOMs of 156 dBc at 60.32 GHz and 158 dBc at 48.86 GHz. © 2007 IEEE.
- KSP Keywords
- 200 GHz, 6 GHz, 60 GHz, BiCMOS process, Cross-coupled differential VCO, F max, Millimeter-wave applications, bias current, millimeter wave(mmWave), process technology