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Conference Paper Low Power 2.5-Gb/s CMOS Burst-Mode Transimpedance Amplifier with Fast Response Time Using a Novel Peak Detection Circuit
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Authors
Young-Ho Kim, Eun-Ok Kim, Wonjong Kim
Issue Date
2015-12
Citation
International Conference on Electronics, Circuits and Systems (ICECS) 2015, pp.225-228
Language
English
Type
Conference Paper
DOI
https://dx.doi.org/10.1109/ICECS.2015.7440289
Abstract
A 2.5 Gb/s CMOS burst-mode transimpedance amplifier (BM-TIA) with a novel peak detection circuit is designed in this paper. The proposed peak detection circuit changes quickly the gain mode of the BM-TIA and then improves the data transmission capacity of the PON system with low power consumption. In order to obtain quick response time of the BM-TIA, a RC-LPF, an amplifier followed it and a replica circuit of the amplifier are built in. This BM-TIA was fabricated in 1P6M 0.18 μm CMOS process. The designed IC exhibits a quick response of 11 nsec for a 2.5 Gb/s burst preamble input. In this condition, this chip of 4 channel consumes 195.4 mW from a 1.8 V supply. In high gain mode, the BM-TIA achieves a gain of 66 dB with 2.45 GHz bandwidth and the eye jitter (rms) of 4.243 ps.
KSP Keywords
2.45 GHz, Burst-mode, CMOS Process, Data transmission, High Gain, Low Power consumption, PON system, Peak detection, Quick Response, Transimpedance Amplifier(TIA), Transmission Capacity