상세정보
학술지
Origin of Degradation Phenomenon under Drain Bias Stress for Oxide Thin Film Transistors using IGZO and IGO Channel Layers
- 발행일
- 201501
- 출처
- Scientific Reports, v.5, pp.1-5
- ISSN
- 2045-2322
- 출판사
- Nature Publishing Group
- 협약과제
- 15MB1600, 미래광고 서비스를 위한 에너지절감형 환경적응 I/O (Input/Output) 플랫폼 기술 개발, 황치선
- 초록
- Top-gate structured thin film transistors (TFTs) using In-Ga-Zn-O (IGZO) and In-Ga-O (IGO) channel compositions were investigated to reveal a feasible origin for degradation phenomenon under drain bias stress (DBS). DBS-driven instability in terms of V TH shift, deviation of the SS value, and increase in the on-state current were detected only for the IGZO-TFT, in contrast to the IGO-TFT, which did not demonstrate V TH shift. These behaviors were visually confirmed via nanoscale transmission electron microscopy and energy-dispersive X-ray spectroscopy observations. To understand the degradation mechanism, we performed ab initio molecular dynamic simulations on the liquid phases of IGZO and IGO. The diffusivities of Ga and In atoms were enhanced in IGZO, confirming the degradation mechanism to be increased atomic diffusion.
- KSP 제안 키워드
- Drain bias stress, In-Ga-Zn-O(IGZO), Molecular dynamics(MD), Oxide thin films, Thin-Film Transistor(TFT), Transmission Electron Microscopy(TEM), ab initio molecular dynamic simulations, atomic diffusion, degradation mechanism, energy dispersive X-ray spectroscopy(EDX), on-state current