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Journal Article Origin of Degradation Phenomenon under Drain Bias Stress for Oxide Thin Film Transistors using IGZO and IGO Channel Layers
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Authors
Jun Yong Bak, Youngho Kang, Shinhyuk Yang, Ho-Jun Ryu, Chi-Sun Hwang, Seungwu Han, Sung-Min Yoon
Issue Date
2015-01
Citation
Scientific Reports, v.5, pp.1-5
ISSN
2045-2322
Publisher
Nature Publishing Group
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1038/srep07884
Abstract
Top-gate structured thin film transistors (TFTs) using In-Ga-Zn-O (IGZO) and In-Ga-O (IGO) channel compositions were investigated to reveal a feasible origin for degradation phenomenon under drain bias stress (DBS). DBS-driven instability in terms of V TH shift, deviation of the SS value, and increase in the on-state current were detected only for the IGZO-TFT, in contrast to the IGO-TFT, which did not demonstrate V TH shift. These behaviors were visually confirmed via nanoscale transmission electron microscopy and energy-dispersive X-ray spectroscopy observations. To understand the degradation mechanism, we performed ab initio molecular dynamic simulations on the liquid phases of IGZO and IGO. The diffusivities of Ga and In atoms were enhanced in IGZO, confirming the degradation mechanism to be increased atomic diffusion.
KSP Keywords
Drain bias stress, In-Ga-Zn-O(IGZO), Molecular dynamics(MD), Oxide thin films, Thin-Film Transistor(TFT), Transmission Electron Microscopy(TEM), ab initio molecular dynamic simulations, atomic diffusion, degradation mechanism, energy dispersive X-ray spectroscopy(EDX), on-state current
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