상세정보
학술지
Hole-driven MIT theory, Mott transition in VO2, MoBRiK device
- 발행일
- 200709
- 출처
- Physica C : Superconductivity, v.460-462, pp.1076-1078
- ISSN
- 0921-4534
- 출판사
- Elsevier
- 초록
- For inhomogeneous high-Tc superconductors, hole-driven metal-insulator transition (MIT) theory explains that the gradual increase of conductivity with increasing hole doping is due to inhomogeneity with the local Mott system undergoing the first-order MIT and the local non-Mott system. For VO2, a monoclinic and correlated metal (MCM) phase showing the linear characteristic as evidence of the Mott MIT is newly observed by applying electric field and temperature. The structural phase transition occurs between MCM and Rutile metal phases. Devices using the MIT are named MoBRiK. © 2007 Elsevier B.V. All rights reserved.
- KSP 제안 키워드
- Linear characteristic, Mott transition, correlated metal, electric field, first-order, high-Tc superconductors, hole doping, metal-insulator transition, structural phase transition