ETRI Knowledge Sharing Platform : Hole-driven MIT theory, Mott transition in VO2, MoBRiK device

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Journal Article Hole-driven MIT theory, Mott transition in VO2, MoBRiK device

Cited 21 time in scopus

Authors: Hyun-Tak Kim, Bong-Jun Kim, Yong Wook Lee, Byung-Gyu Chae, Sun Jin Yun, Kwang-Yong Kang

Abstract: For inhomogeneous high-Tc superconductors, hole-driven metal-insulator transition (MIT) theory explains that the gradual increase of conductivity with increasing hole doping is due to inhomogeneity with the local Mott system undergoing the first-order MIT and the local non-Mott system. For VO2, a monoclinic and correlated metal (MCM) phase showing the linear characteristic as evidence of the Mott MIT is newly observed by applying electric field and temperature. The structural phase transition occurs between MCM and Rutile metal phases. Devices using the MIT are named MoBRiK. © 2007 Elsevier B.V. All rights reserved.

KSP Keywords: First order, Linear characteristic, Mott transition, correlated metal, electric field, high-Tc superconductors, hole doping, metal-insulator transition, structural phase transition

218 Gajeong-ro, Yuseong-gu, Daejeon, 34129, KOREA, Contact: sh.kim@etri.re.kr

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