상세정보
학술지
Selective Oxidation Fin Channel MOSFETs with Low Source=Drain Series Resistance
- 발행일
- 200706
- 출처
- Electronics Letters, v.43 no.13, pp.734-735
- ISSN
- 0013-5194
- 출판사
- IET
- 협약과제
- 07MB2600, 유비쿼터스 단말용 부품 모듈, 김종대
- 초록
- Novel selective oxidation fin channel MOSFETs (SoxFETs) have been developed for fabricating fin channel MOSFETs with low source/drain (S/D) series resistance. Using this technique, SoxFETs have the surround gate structure and gradually increased S/D extension regions. The new structure demonstrates a 74 reduction in S/D series resistance compared with the control device. It was also found that the SoxFET behaved better than the control device in current drivability by suppressing subthreshold swing and drain induced barrier lowering characteristic degradation. © The Institution of Engineering and Technology 2007.
- KSP 제안 키워드
- Control device, Selective oxidation, current drivability, drain-induced barrier lowering(DIBL), series resistance, subthreshold swing(SS), surround gate