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Strain-controlled Selective-area Growth of InGaAsP Films on InP
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- Authors
- Jung Ho Song, Ki Soo Kim, Young Ahn Leem, Hyo Jung Kim, Gyung Ock Kim
- Issue Date
- 2007-08
- Citation
- Japanese Journal of Applied Physics, v.46, no.33, pp.L783-L785
- ISSN
- 0021-4922
- Publisher
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Abstract
- InGaAsP layers were selectively grown using a parallel-stripe-pair mask. Although growth rate enhancement of as high as 1.8 was measured, there was no evidence indicating that the selectively grown films were compressively strained, as in conventional selective-area growth. Calculated results using the gas-phase diffusion model agreed with the experimental results. We attribute the only slightly strained film with high growth rate enhancement to the optimal period of the repeated parallel-stripe-pair mask pattern as well as the opening width and mask width. The period of the pattern has not previously been explicitly considered in conventional selective-area growth. © 2007 The Japan Society of Applied Physics.