상세정보
학술지
Electrical and Microstructural Properties of Lresistance Ti/Re/Au Ohmic Contacts to n-type GaN
- 저자
- V. Rajagopal Reddy, 최철종
- 발행일
- 200710
- 출처
- Physica Status Solidi (A), v.204 no.10, pp.3392-3397
- ISSN
- 1862-6300
- 출판사
- Wiley-VCH Verlag GmbH
- 협약과제
- 07ZB1200, 정보통신미래신기술연구사업, 정태형
- 초록
- The microstructural and electrical properties of Ti/Re/Au (10 nm/10 nm/50 nm) ohmic contacts to moderately doped n-type GaN (4.0 × 10 18 cm -3) have been investigated by current-voltage (I-V), Auger electron microscopy (AES) and transmission electron microscopy (TEM). The electrical characteristics of as-deposited and annealing at temperatures below 800°C samples exhibit non-linear behaviour. However, the sample showed ohmic behaviour when the contact is annealed at 900°C for 1 min in nitrogen ambient. The Ti/Re/Au contacts give specific contact resistance as low as 8.6 × 10 -6 廓 cm 2 after annealing at 900°C. It is shown that the surface of the as-deposited contact is fairly smooth and slightly degraded when the contact is annealed at 900°C. The Ti/Re/Au ohmic contact showed good edge acuity after annealing at 900°C for 1 min. Based on the Auger electron microscopy and transmission electron microscopy results, possible ohmic formation mechanisms for the Ti/Re/Au contacts to the n-type GaN are described and discussed. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.
- KSP 제안 키워드
- As-deposited, Au contacts, Auger electron microscopy, Co. KGaA, Contact resistance(73.40.Cg), Current-voltage, Formation Mechanism, Initialization Vector(IV), Microstructural properties, N-type GaN, Ohmic behaviour