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Journal Article
Electrical and microstructural properties of low‐resistance Ti/Re/Au ohmic contacts to n‐type GaN
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- Authors
- V. Rajagopal Reddy, Chel-Jong Choi
- Issue Date
- 2007-10
- Citation
- Physica Status Solidi (A), v.204, no.10, pp.3392-3397
- ISSN
- 1862-6300
- Publisher
- Wiley-VCH Verlag GmbH
- Language
- English
- Type
- Journal Article
- Abstract
- The microstructural and electrical properties of Ti/Re/Au (10 nm/10 nm/50 nm) ohmic contacts to moderately doped n-type GaN (4.0 × 10 18 cm -3) have been investigated by current-voltage (I-V), Auger electron microscopy (AES) and transmission electron microscopy (TEM). The electrical characteristics of as-deposited and annealing at temperatures below 800°C samples exhibit non-linear behaviour. However, the sample showed ohmic behaviour when the contact is annealed at 900°C for 1 min in nitrogen ambient. The Ti/Re/Au contacts give specific contact resistance as low as 8.6 × 10 -6 廓 cm 2 after annealing at 900°C. It is shown that the surface of the as-deposited contact is fairly smooth and slightly degraded when the contact is annealed at 900°C. The Ti/Re/Au ohmic contact showed good edge acuity after annealing at 900°C for 1 min. Based on the Auger electron microscopy and transmission electron microscopy results, possible ohmic formation mechanisms for the Ti/Re/Au contacts to the n-type GaN are described and discussed. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.
- KSP Keywords
- As-deposited, Au contacts, Auger electron microscopy, Co. KGaA, Contact resistance(73.40.Cg), Current-voltage, Formation Mechanism, Initialization Vector(IV), Microstructural properties, N-type GaN, Ohmic behaviour