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Journal Article Temperature Dependence of Silicon Nanophotonic Ring Resonator With a Polymeric Overlayer
Cited 114 time in scopus Share share facebook twitter linkedin kakaostory
Authors
Jong-Moo Lee, Duk-Jun Kim, Ho Kyun Ahn, Sang-Ho Park, Gyung Ock Kim
Issue Date
2007-08
Citation
IEEE/OSA Journal of Lightwave Technology, v.25, no.8, pp.2236-2243
ISSN
0733-8724
Publisher
IEEE, OSA
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1109/JLT.2007.899792
Abstract
In this paper, we investigate the temperature dependence of a silicon-on-insulator-based silicon nanophotonic ring resonator covered with a polymeric overlayer. Temperature-dependent wavelength shift is measured to be as low as 5 pm/°C for the TM mode in a silicon ring resonator composed of a 500 × 220 nm2 channel waveguide. We also show through simulations and experiments that the temperature dependence can be reduced for the TE mode or for both the TE and TM modes by adjusting the mode volume of a silicon nanophotonic waveguide. © 2007 IEEE.
KSP Keywords
20 nm, Mode volume, Show through, Silicon On Insulator(SOI), Silicon ring resonator, TE Mode, TM mode, Temperature-dependent, channel waveguide, temperature dependence, wavelength shift