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Conference Paper
Fully Integrated Wideband Power Amplifier in GaN Technology
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- Authors
- B. H. Park, S. H. Jang, C. H. Kim, J. H. Jung
- Issue Date
- 2015-12
- Citation
- Asia-Pacific Microwave Conference (APMC) 2015, pp.1-3
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- A fully integrated wideband power amplifier (PA) has been developed by using gallium nitride (GaN) 0.25-p.m technology. The PA is designed with commercial GaN process, in a single-ended configuration, starting from on-chip in-out matching. This PA adopts the saturated architecture and achieves average drain efficiency of 43.8% from 2.0 GHz to 3.0 GHz with an average output power and gain of 38 dBm and 15.4 dB respectively.
- KSP Keywords
- GaN technology, Gallium nitride (gan), Output power, Single-Ended, drain efficiency(DE), fully integrated, on-chip, power amplifiers(PAs), wideband power amplifier