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학술대회 Fully Integrated Wideband Power Amplifier in GaN Technology
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저자
박봉혁, 장승현, 김철호, 정재호
발행일
201512
출처
Asia-Pacific Microwave Conference (APMC) 2015, pp.1-3
DOI
https://dx.doi.org/10.1109/APMC.2015.7413560
협약과제
14PI2100, LTE-A기지국용 전력증폭기를 포함하는 RF Transceiver통합칩 개발, 박봉혁
초록
A fully integrated wideband power amplifier (PA) has been developed by using gallium nitride (GaN) 0.25-p.m technology. The PA is designed with commercial GaN process, in a single-ended configuration, starting from on-chip in-out matching. This PA adopts the saturated architecture and achieves average drain efficiency of 43.8% from 2.0 GHz to 3.0 GHz with an average output power and gain of 38 dBm and 15.4 dB respectively.
KSP 제안 키워드
Fully integrated, GaN technology, On-chip, Output power, Single-Ended, drain efficiency(DE), power amplifiers(PAs), wideband power amplifier