상세정보
학술대회
Fully Integrated Wideband Power Amplifier in GaN Technology
- 발행일
- 201512
- 출처
- Asia-Pacific Microwave Conference (APMC) 2015, pp.1-3
- 협약과제
- 14PI2100, LTE-A기지국용 전력증폭기를 포함하는 RF Transceiver통합칩 개발, 박봉혁
- 초록
- A fully integrated wideband power amplifier (PA) has been developed by using gallium nitride (GaN) 0.25-p.m technology. The PA is designed with commercial GaN process, in a single-ended configuration, starting from on-chip in-out matching. This PA adopts the saturated architecture and achieves average drain efficiency of 43.8% from 2.0 GHz to 3.0 GHz with an average output power and gain of 38 dBm and 15.4 dB respectively.
- KSP 제안 키워드
- Fully integrated, GaN technology, On-chip, Output power, Single-Ended, drain efficiency(DE), power amplifiers(PAs), wideband power amplifier